FDS8672S Todos los transistores

 ..1. Size:253K  fairchild semi
 fds8672s.pdf

December 2007 FDS8672S tm N-Channel PowerTrench SyncFET 30V, 18A, 4.8m Features General Description Max rDS(on) = 4.8m at VGS = 10V, ID = 18A The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A MOSFET is designed to maximize power conversion efficiency, pro

 8.1. Size:597K  fairchild semi
 fds8670.pdf

January 2008 FDS8670 tm 30V N-Channel PowerTrench MOSFET General Description Features This device has been designed specifically to improve 21 A, 30 V Max RDS(ON) = 3.7 m @ VGS = 10 V the efficiency of DC-DC converters. Using new Max RDS(ON) = 5.0 m @ VGS = 4.5 V techniques in MOSFET construction, the various High performance trench technology for extremely lo

 9.1. Size:256K  fairchild semi
 fds86540.pdf

May 2012 FDS86540 N-Channel PowerTrench MOSFET 60 V, 18 A, 4.5 m Features General Description Max rDS(on) = 4.5 m at VGS = 10 V, ID = 18 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.4 m at VGS = 8 V, ID = 16.5 A ringing of DC/DC converters using either synchronous or High performanc

 9.2. Size:250K  fairchild semi
 fds86140.pdf

March 2011 FDS86140 N-Channel PowerTrench MOSFET 100 V, 11.2 A, 9.8 m Features General Description Max rDS(on) = 9.8 m at VGS = 10 V, ID = 11.2 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 16 m at VGS = 6 V, ID = 9 A Semiconductor s advanced Power Trench process that has High performance trench technologh for extremely low rDS(on) been optimized f

 9.3. Size:258K  fairchild semi
 fds86252.pdf

April 2011 FDS86252 N-Channel Power Trench MOSFET 150 V, 4.5 A, 55 m Features General Description Max rDS(on) = 55 m at VGS = 10 V, ID = 4.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 80 m at VGS = 6 V, ID = 3.7 A been especially tailored to minimize the on-state resistance and High performa

 9.4. Size:251K  fairchild semi
 fds86242.pdf

August 2010 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching performance and High performance tren

 9.5. Size:250K  fairchild semi
 fds86141.pdf

July 2011 FDS86141 N-Channel Power Trench MOSFET 100 V, 7 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and High performance

 9.6. Size:356K  fairchild semi
 fds8690.pdf

January 2006 FDS8690 N-Channel PowerTrench MOSFET 30V, 14A, 7.6m General Description Features Max rDS(on) = 7.6m , VGS = 10V, ID = 14A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 11.4m , VGS = 4.5V, ID = 11.5A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conv

 9.7. Size:238K  fairchild semi
 fds86240.pdf

June 2010 FDS86240 N-Channel PowerTrench MOSFET 150 V, 7.5 A, 19.8 m Features General Description Max rDS(on) = 19.8 m at VGS = 10 V, ID = 7.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 26 m at VGS = 6 V, ID = 6.4 A been optimized for rDS(on), switching performance and High performance tre

 9.8. Size:280K  fairchild semi
 fds8638.pdf

March 2009 FDS8638 N-Channel PowerTrench MOSFET 40 V, 18 A, 4.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.3 m at VGS = 10 V, ID = 18 A Semiconductor s advance Power Trench process that has been especially tailored to minimize the on-state resistance and Max rDS(on) = 5.4 m at VGS = 4.5 V, ID = 16 A yet maintai

 9.9. Size:257K  fairchild semi
 fds86106.pdf

July 2011 FDS86106 N-Channel Power Trench MOSFET 100 V, 3.4 A, 105 m Features General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) been optimized

 9.10. Size:359K  onsemi
 fds86540.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:354K  onsemi
 fds86140.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.12. Size:329K  onsemi
 fds86252.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.13. Size:678K  onsemi
 fds86242.pdf

Sept 2017 FDS86242 N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 m Features General Description Max rDS(on) = 67 m at VGS = 10 V, ID = 4.1 A This N -Channel MOSFET is produ ced using ON Semiconductor s advanced Power T rench process that has Max rDS(on) = 98 m at VGS = 6 V, ID = 3.3 A been optimized for rDS(on), switching per formance and High performance trench te

 9.14. Size:396K  onsemi
 fds86267p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.15. Size:417K  onsemi
 fds8690.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.16. Size:419K  onsemi
 fds86240.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:327K  onsemi
 fds86106.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:819K  cn vbsemi
 fds86242.pdf

FDS86242 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO-