FDP020N06B Todos los transistores

 ..1. Size:658K  fairchild semi
 fdp020n06b f102.pdf

January 2012 FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description RDS(on) = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tailored Low FOM RDS(on) *QG to minimize the on-state resistance while maintaining superior switching performance

 ..2. Size:668K  fairchild semi
 fdp020n06b.pdf

November 2013 FDP020N06B N-Channel PowerTrench MOSFET 60 V, 313 A, 2 m Features Description RDS(on) = 1.65 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance.

 ..3. Size:776K  onsemi
 fdp020n06b.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:661K  fairchild semi
 fdp027n08b.pdf

November 2013 FDP027N08B N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 m Features Description RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QG mize the on-state resistance while maintaining superior Low Reverse-Recovery Char

 9.2. Size:595K  fairchild semi
 fdp025n06.pdf

July 2008 FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5m Features General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 9.3. Size:638K  fairchild semi
 fdp023n08b.pdf

November 2013 FDP023N08B N-Channel PowerTrench MOSFET 75 V, 242 A, 2.35 m Features Description RDS(on) = 1.96 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Low FOM RDS(on)*QG lored to minimize the on-state resistance while maintaining Low Reverse Recovery Charge

 9.4. Size:870K  onsemi
 fdp027n08b.pdf

FDP027N08B N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 m Description Features This N-Channel MOSFET is produced using ON Semicon- RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 A ductor s PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QG mize the on-state resistance while maintaining superior Low Reverse-Recovery Charge, Qrr = 112 nC s

 9.5. Size:745K  onsemi
 fdp023n08b.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur