FDD8424HF085A Todos los transistores

 

FDD8424HF085A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD8424HF085A
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET FDD8424HF085A

 

FDD8424HF085A Datasheet (PDF)

 6.1. Size:651K  fairchild semi
fdd8424h.pdf

FDD8424HF085A
FDD8424HF085A

March 2007FDD8424HtmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench- process that has been especially Max rDS(on)

 6.2. Size:541K  fairchild semi
fdd8424h f085a.pdf

FDD8424HF085A
FDD8424HF085A

Jan 2013FDD8424H_F085AtmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench process that has been especially Max rDS(

 6.3. Size:808K  fairchild semi
fdd8424h f085.pdf

FDD8424HF085A
FDD8424HF085A

October 2008FDD8424H_F085tmDual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m P-Channel: -40V, -20A, 54mFeatures General DescriptionQ1: N-ChannelThese dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductors Max rDS(on) = 24m at VGS = 10V, ID = 9.0Aadvanced PowerTrench- process that has been especially Max

 6.4. Size:452K  onsemi
fdd8424h.pdf

FDD8424HF085A
FDD8424HF085A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


FDD8424HF085A
  FDD8424HF085A
  FDD8424HF085A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top