FDD5N60NZ Todos los transistores

 ..1. Size:630K  fairchild semi
 fdd5n60nz.pdf

November 2013 FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Features Description RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 10 nC) technology. This advanced MOSFET family has the smallest Low Crss (Typ. 5 pF) on-stat

 0.1. Size:235K  fairchild semi
 fdd5n60nztm.pdf

December 2010 TM UniFET-II FDD5N60NZ N-Channel MOSFET 600V, 4.0A, 2 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.0A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 10nC) technology. Low Crss ( Typ. 5pF) This advance technology has been e

 9.1. Size:645K  fairchild semi
 fdd5n50u.pdf

December 2007 TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance technology h

 9.2. Size:752K  fairchild semi
 fdd5n50f.pdf

December 2007 UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has

 9.3. Size:503K  fairchild semi
 fdd5n50.pdf

December 2007 UniFETTM FDD5N50 tm N-Channel MOSFET 500V, 4A, 1.4 Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been especiall

 9.4. Size:548K  fairchild semi
 fdd5n50nz.pdf

November 2009 UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been especially

 9.5. Size:564K  fairchild semi
 fdd5n50nzf.pdf

November 2009 UniFET-IITM FDD5N50NZF N-Channel MOSFET 500V, 3.7A, 1.75 Features Description RDS(on) = 1.47 ( Typ.)@ VGS = 10V, ID = 1.85A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 9nC) stripe, DMOS technology. Low Crss ( Typ. 4pF) This advance technology has been esp

 9.6. Size:244K  fairchild semi
 fdd5n53 fdu5n53.pdf

January 2009 UniFETTM FDD5N53/FDU5N53 tm N-Channel MOSFET 530V, 4A, 1.5 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has been espe

 9.7. Size:833K  onsemi
 fdd5n50u.pdf

FDD5N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 3 A, 2.0 Description Features UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 A This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performance

 9.8. Size:841K  onsemi
 fdd5n50.pdf

FDD5N50 N-Channel UniFETTM MOSFET Description 500 V, 4 A, 1.4 UniFETTM MOSFET is ON Semiconductor s high voltage Features MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2 A provide better switching performance and higher avalanche Low Gate Charge (Typ.

 9.9. Size:765K  onsemi
 fdd5n50ftm-ws.pdf

FDD5N50FTM-WS N-Channel UniFETTM FRFET MOSFET 500 V, 3.5 A, 1.55 Description Features UniFETTM MOSFET is ON Semiconductor s high voltage RDS(on) = 1.25 (Typ.) @ VGS = 10 V, ID = 1.75 A MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 11 nC) provide better switching performa

 9.10. Size:713K  onsemi
 fdd5n50nz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.11. Size:1732K  onsemi
 fdd5n50nzf.pdf