FDD86113LZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD86113LZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 3.7 nC
   trⓘ - Tiempo de subida: 1.3 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm
   Paquete / Cubierta: TO252

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FDD86113LZ Datasheet (PDF)

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fdd86113lz.pdf

June 2013FDD86113LZN-Channel Shielded Gate PowerTrench MOSFET 100 V, 5.5 A, 104 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process Max rDS(on) = 104 m at VGS = 10 V, ID = 4.2 Athat incorporates Shielded Gate technology. This process has been optimi

..2. Size:465K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fdd86110.pdf

December 2014FDD86110N-Channel Shielded Gate PowerTrench MOSFET 100 V, 50 A, 10.2 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 10.2 m at VGS = 10 V, ID = 12.5 Aincorporates Shielded Gate technology. This process has been optimized for th

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7.3. Size:309K inchange semiconductor
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isc N-Channel MOSFET Transistor FDD86110FEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 10.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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