FCPF380N60E Todos los transistores

 ..1. Size:624K  fairchild semi
 fcp380n60e fcpf380n60e.pdf

November 2013 FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 ..2. Size:802K  onsemi
 fcp380n60e fcpf380n60e.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.1. Size:637K  fairchild semi
 fcp380n60 fcpf380n60.pdf

November 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3

 4.2. Size:540K  onsemi
 fcp380n60 fcpf380n60.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.3. Size:290K  onsemi
 fcpf380n60 f152.pdf

July 2013 FCPF380N60_F152 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s first gener- ation of high voltage super-junction (SJ) MOSFET family that is Max. RDS(on) = 380 m utilizing charge balance technology for outstanding low on-resis- Ultra low gate charge (typ. Qg = 30

 4.4. Size:202K  inchange semiconductor
 fcpf380n60.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF380N60 FEATURES With TO-220F packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RAT