FDMS86310 Todos los transistores

 

FDMS86310 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS86310
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 693 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: PQFN5X6

 Búsqueda de reemplazo de MOSFET FDMS86310

 

FDMS86310 Datasheet (PDF)

 ..1. Size:417K  1
fdms86310.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..2. Size:309K  fairchild semi
fdms86310.pdf

FDMS86310
FDMS86310

October 2014FDMS86310N-Channel PowerTrench MOSFET80 V, 50 A, 4.8 mFeatures General Description Max rDS(on) = 4.8 m at VGS = 10 V, ID = 17 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 m at VGS = 8 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Packa

 ..3. Size:417K  onsemi
fdms86310.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.1. Size:747K  1
fdms86369-f085.pdf

FDMS86310
FDMS86310

2021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

 7.2. Size:449K  1
fdms86320.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.3. Size:431K  1
fdms86322.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.4. Size:554K  1
fdms86380-f085.pdf

FDMS86310
FDMS86310

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.5. Size:272K  fairchild semi
fdms86350.pdf

FDMS86310
FDMS86310

November 2013FDMS86350N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 ASemiconductors advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 Abeen especially tailored to minimize the on-state resistance and Advanced

 7.6. Size:338K  fairchild semi
fdms86320.pdf

FDMS86310
FDMS86310

October 2014FDMS86320N-Channel PowerTrench MOSFET80 V, 44 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or Advanced P

 7.7. Size:216K  fairchild semi
fdms86322.pdf

FDMS86310
FDMS86310

October 2010FDMS86322N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance and Advanced P

 7.8. Size:496K  fairchild semi
fdms86369 f085.pdf

FDMS86310
FDMS86310

March 2015FDMS86369_F085N-Channel PowerTrench MOSFET80 V, 65 A, 7.5 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurrent

 7.9. Size:244K  fairchild semi
fdms86300dc.pdf

FDMS86310
FDMS86310

December 2014FDMS86300DCN-Channel Dual CoolTM PowerTrench MOSFET80 V, 110 A, 3.1 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a

 7.10. Size:535K  fairchild semi
fdms86368 f085.pdf

FDMS86310
FDMS86310

December 2014FDMS86368_F085N-Channel PowerTrench MOSFET80 V, 80 A, 4.5 m Features Typical RDS(on) = 3.7 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcu

 7.11. Size:267K  fairchild semi
fdms86300.pdf

FDMS86310
FDMS86310

August 2011FDMS86300N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 mFeatures General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 Aringing of DC/DC converters using either synchronous or Advanced Pac

 7.12. Size:306K  fairchild semi
fdms86350et80.pdf

FDMS86310
FDMS86310

January 2015FDMS86350ET80N-Channel PowerTrench MOSFET80 V, 198 A, 2.4 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 Abeen especially tailored to minimize the on-state resistance and yet maintain superior sw

 7.13. Size:747K  onsemi
fdms86369-f085.pdf

FDMS86310
FDMS86310

2021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

 7.14. Size:620K  onsemi
fdms86350.pdf

FDMS86310
FDMS86310

FDMS86350N-Channel PowerTrench MOSFETGeneral Description80 V, 130 A, 2.4 mThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has Featuresbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8

 7.15. Size:431K  onsemi
fdms86322.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.16. Size:518K  onsemi
fdms86368-f085.pdf

FDMS86310
FDMS86310

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 7.17. Size:461K  onsemi
fdms86381-f085.pdf

FDMS86310
FDMS86310

FDMS86381-F085N-Channel PowerTrench MOSFET 80 V, 30 A, 22 mFeatures Typical RDS(on) = 17.2 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator D

 7.18. Size:206K  onsemi
fdms86300dc.pdf

FDMS86310
FDMS86310

FDMS86300DCPOWERTRENCH) MOSFET,N-Channel, DUAL COOL) 5680 V, 110 A, 3.1 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process thatELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconand DUAL COOL package technologies have been combined toS Doffer the lowes

 7.19. Size:452K  onsemi
fdms86300.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 7.20. Size:347K  onsemi
fdms86350et80.pdf

FDMS86310
FDMS86310

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTC230N085T

 

 
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History: IXTC230N085T

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