FDMA8878 Todos los transistores

 ..1. Size:338K  fairchild semi
 fdma8878.pdf

May 2014 FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 19 m at VGS = 4.5 V, ID = 8.5 A been optimized for rDS(on), switching performance. High performance trenc

 8.1. Size:383K  fairchild semi
 fdma8884.pdf

May 2014 FDMA8884 Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 6.0 A been optimized for rDS(on) switching performance. High performance trenc

 9.1. Size:359K  fairchild semi
 fdma8051l.pdf

January 2014 FDMA8051L Single N-Channel PowerTrench MOSFET 40 V, 10 A, 14 m Features General Description Max rDS(on) = 14 m at VGS = 10 V, ID = 10 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 18 m at VGS = 4.5 V, ID = 8.5 A low rDS(on) and gate charge provide excellent switching per

 9.2. Size:505K  fairchild semi
 fdma86251.pdf

March 2015 FDMA86251 Single N-Channel PowerTrench MOSFET 150 V, 2.4 A, 175 m Features General Description Max rDS(on) = 175 m at VGS = 10 V, ID = 2.4 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 237 m at VGS = 6 V, ID = 2.0 A low rDS(on) and gate charge provide excellent switching

 9.3. Size:449K  fairchild semi
 fdma86108lz.pdf

March 2015 FDMA86108LZ Single N-Channel PowerTrench MOSFET 100 V, 2.2 A, 243 m Features General Description Max rDS(on) = 243 m at VGS = 10 V, ID = 2.2 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 366 m at VGS = 4.5 V, ID = 1.8 A low rDS(on) and gate charge provide excellent switching

 9.4. Size:559K  fairchild semi
 fdma86151l.pdf

September 2014 FDMA86151L Single N-Channel PowerTrench MOSFET 100 V, 3.3 A, 88 m Features General Description Max rDS(on) = 88 m at VGS = 10 V, ID = 3.3 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 132 m at VGS = 4.5 V, ID = 2.7 A low rDS(on) and gate charge provide excellent switchin

 9.5. Size:296K  fairchild semi
 fdma86265p.pdf

May 2014 FDMA86265P P-Channel PowerTrench MOSFET -150 V, -1 A, 1.2 Features General Description Max rDS(on) = 1.2 at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 1.4 at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Low Profile - 0.8 m

 9.6. Size:374K  fairchild semi
 fdma86551l.pdf

October 2014 FDMA86551L Single N-Channel PowerTrench MOSFET 60 V, 7.5 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7.5 A This device has been designed to provide maximum efficiency and thermal performance for synchronous buck converters. The Max rDS(on) = 35 m at VGS = 4.5 V, ID = 6 A low rDS(on) and gate charge provide excellent switching L

 9.7. Size:888K  onsemi
 fdma86265p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur