FDPC8011S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDPC8011S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 332 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Encapsulados: PQFN3.3X3.3
Búsqueda de reemplazo de FDPC8011S MOSFET
- Selecciónⓘ de transistores por parámetros
FDPC8011S datasheet
fdpc8011s.pdf
October 2014 FDPC8011S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.3 m at VGS = 4.5 V, ID = 12 A enable easy placement and routing of synchronous buck Q2 N-Channel converters. Th
fdpc8011s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpc8016s.pdf
October 2013 FDPC8016S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 A enable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS
fdpc8014s.pdf
April 2014 FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 A enable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4
Otros transistores... HUF75852G3F085 , FDMS3016DC , FDMS86101DC , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , 75N75 , HUF75639SF085A , FDMS3620S , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , FDD390N15ALZ , FDMA7628 .
History: IRFI4110G
History: IRFI4110G
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