FDMS3620S Todos los transistores

 

FDMS3620S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS3620S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 17.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 448 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: PQFN5X6
 

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FDMS3620S PDF Specs

 ..1. Size:368K  fairchild semi
fdms3620s.pdf pdf_icon

FDMS3620S

July 2012 FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 4.7 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing... See More ⇒

 ..2. Size:427K  onsemi
fdms3620s.pdf pdf_icon

FDMS3620S

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:389K  fairchild semi
fdms3624s.pdf pdf_icon

FDMS3620S

December 2011 FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

 7.2. Size:397K  fairchild semi
fdms3622s.pdf pdf_icon

FDMS3620S

December 2011 FDMS3622S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒

Otros transistores... FDMS86101DC , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , IRFB31N20D , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , FDD390N15ALZ , FDMA7628 , FDMC86248 , FDPC8013S .

 

 
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