FDMS3620S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS3620S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 17.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 448 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de FDMS3620S MOSFET
FDMS3620S PDF Specs
fdms3620s.pdf
July 2012 FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 4.7 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and routing... See More ⇒
fdms3620s.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fdms3624s.pdf
December 2011 FDMS3624S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒
fdms3622s.pdf
December 2011 FDMS3622S PowerTrench Power Stage 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally Max rDS(on) = 5.7 m at VGS = 4.5 V, ID = 16 A connected to enable easy placement and ro... See More ⇒
Otros transistores... FDMS86101DC , FCP380N60 , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , IRFB31N20D , FDMS86300DC , FCPF400N60 , FDD86540 , FDMS015N04B , FDD390N15ALZ , FDMA7628 , FDMC86248 , FDPC8013S .
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