HUF75345P3 Todos los transistores

 

HUF75345P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF75345P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 325 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 220 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220AB
 

 Búsqueda de reemplazo de HUF75345P3 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HUF75345P3 Datasheet (PDF)

 ..1. Size:326K  fairchild semi
 huf75345g3 huf75345p3 huf75345s3s huf75345s3 huf75345s3st.pdf pdf_icon

HUF75345P3

HUF75345G3, HUF75345P3, HUF75345S3SData Sheet December 200975A, 55V, 0.007 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - Thermal Impedance SPICE and SABER Models

 ..2. Size:588K  onsemi
 huf75345g3 huf75345p3 huf75345s3s.pdf pdf_icon

HUF75345P3

MOSFET Power, N-Channel,UltraFET55 V, 75 A, 7 mWHUF75345G3, HUF75345P3,HUF75345S3Swww.onsemi.comDescriptionThese N-Channel power MOSFETs are manufactured usingVDSS RDS(ON) MAX ID MAXthe innovative UltraFET process. This advanced process technology55 V 7 mW 75 Aachieves the lowest possible on-resistance per silicon area, resultingin outstanding performance. This devic

 6.1. Size:254K  inchange semiconductor
 huf75345s3st.pdf pdf_icon

HUF75345P3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor HUF75345S3STDESCRIPTIONDrain Current: I = 75A@ T =25D CDrain Source Voltage: V = 55V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM

 7.1. Size:430K  fairchild semi
 huf75344a3.pdf pdf_icon

HUF75345P3

October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan

MOSTRAR MÁS

Otros transistores... HUF75339S3ST , HUF75343G3 , HUF75343P3 , HUF75343S3S , HUF75344G3 , HUF75344P3 , HUF75344S3S , HUF75345G3 , IRF730 , HUF75345S3S , HUF75545P3 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , HUF75637P3 , HUF75637S3S .

History: FDT439N | BUZ80

 

 
Back to Top

 


 
.