FDP053N08B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP053N08B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 146 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 740 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de FDP053N08B MOSFET
FDP053N08B Datasheet (PDF)
fdp053n08b.pdf

June 2014FDP053N08BN-Channel PowerTrench MOSFET 80 V, 120 A, 5.3 mFeatures Description RDS(on) = 4.2 m (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintaining superior switching performance.
fdp053n08b.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDP053N08BFEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIM
fdp054n10.pdf

August 2010FDP054N10N-Channel PowerTrench MOSFET 100V, 144A, 5.5mFeatures Description RDS(on) = 4.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching performance.
fdb050an06a0 fdp050an06a0.pdf

February 2003FDB050AN06A0 / FDP050AN06A0N-Channel PowerTrench MOSFET60V, 80A, 5mFeatures Applications rDS(ON) = 4.3m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 61nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pul
Otros transistores... FDPC8013S , FDP039N08B , FDME820NZT , FDS86540 , FDPF18N20FTG , HUF76633P3F085 , FDMS030N06B , FDMA3027PZ , AO3407 , FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , FDMS8558SDC , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L .



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