FDP053N08B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP053N08B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 146 W
Tensión drenaje-fuente (Vds): 80 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 120 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4.5 V
Carga de compuerta (Qg): 85 nC
Resistencia drenaje-fuente RDS(on): 0.0053 Ohm
Empaquetado / Estuche: TO220
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FDP053N08B Datasheet (PDF)
1.1. fdp053n08b.pdf 
Size:1440K _fairchild_semi
June 2014 FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance.
1.2. fdp053n08b.pdf Size:207K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FDP053N08B ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIM
5.1. fdb050an06a0 fdp050an06a0.pdf Size:564K _fairchild_semi
February 2003 FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 5m? Features Applications rDS(ON) = 4.3m? (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 61nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and
5.2. fdp054n10.pdf Size:269K _fairchild_semi
August 2010 FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5m? Features Description RDS(on) = 4.6m? ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low Gate C
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