FDP053N08B Todos los transistores

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FDP053N08B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP053N08B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 146 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 120 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 85 nC

Resistencia drenaje-fuente RDS(on): 0.0053 Ohm

Empaquetado / Estuche: TO220

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FDP053N08B Datasheet (PDF)

1.1. fdp053n08b.pdf Size:1440K _fairchild_semi

FDP053N08B
FDP053N08B

June 2014 FDP053N08B N-Channel PowerTrench® MOSFET 80 V, 120 A, 5.3 mΩ Features Description • RDS(on) = 4.2 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench® process that has been tai- • Low FOM RDS(on) * QG lored to minimize the on-state resistance while maintaining superior switching performance.

5.1. fdp054n10.pdf Size:269K _fairchild_semi

FDP053N08B
FDP053N08B

August 2010 FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5m? Features Description RDS(on) = 4.6m? ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Low Gate C

5.2. fdb050an06a0 fdp050an06a0.pdf Size:564K _fairchild_semi

FDP053N08B
FDP053N08B

February 2003 FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 5m? Features Applications rDS(ON) = 4.3m? (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 61nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and

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