FDMS8558SDC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8558SDC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 1508 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm

Encapsulados: PQFN5X6

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FDMS8558SDC datasheet

 ..1. Size:405K  fairchild semi
 fdms8558sdc.pdf pdf_icon

FDMS8558SDC

July 2013 FDMS8558SDC N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

 5.1. Size:325K  fairchild semi
 fdms8558s.pdf pdf_icon

FDMS8558SDC

October 2014 FDMS8558S(PCN) N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

 8.1. Size:295K  fairchild semi
 fdms8560s.pdf pdf_icon

FDMS8558SDC

November 2014 FDMS8560S N-Channel PowerTrench SyncFETTM 25 V, 70 A, 1.8 m Features General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 A Advancements in both silicon and package technologies have High performance te

 8.2. Size:397K  fairchild semi
 fdms8570sdc.pdf pdf_icon

FDMS8558SDC

July 2013 FDMS8570SDC N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 m Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

MOSTRAR MÁS

Otros transistores... FDPF18N20FTG, HUF76633P3F085, FDMS030N06B, FDMA3027PZ, FDP053N08B, FCB20N60FF085, FDMS8570SDC, FDMC8588DC, IRF730, FDMC86160, FDB2552F085, FDMS86150, FDMC89521L, FDMQ86530L, FDB035AN06F085, FCP260N60E, FCPF260N60E