FDMS8558SDC Todos los transistores

 

FDMS8558SDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8558SDC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 89 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 90 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.2 V

Carga de compuerta (Qg): 81 nC

Resistencia drenaje-fuente RDS(on): 0.0015 Ohm

Empaquetado / Estuche: PQFN5X6

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FDMS8558SDC Datasheet (PDF)

1.1. fdms8558s.pdf Size:325K _fairchild_semi

FDMS8558SDC
FDMS8558SDC

October 2014 FDMS8558S(PCN) N-Channel PowerTrench® SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 33 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 mΩ at VGS = 4.5 V,

1.2. fdms8558sdc.pdf Size:405K _fairchild_semi

FDMS8558SDC
FDMS8558SDC

July 2013 FDMS8558SDC N-Channel PowerTrench® SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 38 A Advancements in both silicon and package technologies have Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 3

 4.1. fdms8570sdc.pdf Size:397K _fairchild_semi

FDMS8558SDC
FDMS8558SDC

July 2013 FDMS8570SDC N-Channel PowerTrench® SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 28 A Advancements in both silicon and package technologies have Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 2

4.2. fdms8570s.pdf Size:290K _fairchild_semi

FDMS8558SDC
FDMS8558SDC

November 2014 FDMS8570S N-Channel PowerTrench® SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A Advancements in both silicon and package technologies have High performance te

 4.3. fdms8560s.pdf Size:295K _fairchild_semi

FDMS8558SDC
FDMS8558SDC

November 2014 FDMS8560S N-Channel PowerTrench® SyncFETTM 25 V, 70 A, 1.8 mΩ Features General Description Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 28 A Advancements in both silicon and package technologies have High performance te

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