FDMS8558SDC Todos los transistores

 

FDMS8558SDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS8558SDC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1508 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
   Paquete / Cubierta: PQFN5X6
 

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FDMS8558SDC Datasheet (PDF)

 ..1. Size:405K  fairchild semi
 fdms8558sdc.pdf pdf_icon

FDMS8558SDC

July 2013FDMS8558SDCN-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 38 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V, ID = 3

 5.1. Size:325K  fairchild semi
 fdms8558s.pdf pdf_icon

FDMS8558SDC

October 2014FDMS8558S(PCN)N-Channel PowerTrench SyncFETTM25 V, 90 A, 1.5 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 1.5 m at VGS = 10 V, ID = 33 AAdvancements in both silicon and package technologies have Max rDS(on) = 1.7 m at VGS = 4.5 V,

 8.1. Size:295K  fairchild semi
 fdms8560s.pdf pdf_icon

FDMS8558SDC

November 2014FDMS8560SN-Channel PowerTrench SyncFETTM25 V, 70 A, 1.8 mFeatures General Description Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.1 m at VGS = 4.5 V, ID = 28 AAdvancements in both silicon and package technologies have High performance te

 8.2. Size:397K  fairchild semi
 fdms8570sdc.pdf pdf_icon

FDMS8558SDC

July 2013FDMS8570SDCN-Channel PowerTrench SyncFETTM25 V, 60 A, 2.8 mFeatures General Description Dual CoolTM PQFN package This N-Channel SyncFETTM is produced using Fairchild Semiconductors advanced PowerTrench process. Max rDS(on) = 2.8 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and package technologies have Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 2

MOSTRAR MÁS

Otros transistores... FDPF18N20FTG , HUF76633P3F085 , FDMS030N06B , FDMA3027PZ , FDP053N08B , FCB20N60FF085 , FDMS8570SDC , FDMC8588DC , BS170 , FDMC86160 , FDB2552F085 , FDMS86150 , FDMC89521L , FDMQ86530L , FDB035AN06F085 , FCP260N60E , FCPF260N60E .

History: RCJ160N20 | MTB30P06VT4 | WMT04P06TS | WSD2054DN22 | HSL0004 | CRTS030N04L | SWD10N65K2

 

 
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