HUF75345S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75345S3S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 325 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 75 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 220 nC
Resistencia drenaje-fuente RDS(on): 0.007 Ohm
Empaquetado / Estuche: TO263AB
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HUF75345S3S Datasheet (PDF)
1.1. huf75345s3 huf75345s3st.pdf 
Size:326K _update_mosfet
HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models
1.2. huf75345g3 huf75345p3 huf75345s3s.pdf Size:326K _fairchild_semi
HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2009 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves th
3.1. huf75344a3.pdf Size:430K _update_mosfet
October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS(on) = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced • RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan
3.2. huf75343s3 huf75343s3st.pdf Size:280K _update_mosfet
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet March 2003 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and
3.3. huf75343.pdf Size:205K _fairchild_semi
HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensating PSPICE® and SABER™ innovative UltraFET® process. This Models advanced process technology - Thermal Impedance PSPICE™ and SABER Mode
3.4. huf75344.pdf Size:142K _intersil
HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs • 75A, 55V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER© innovative UltraFET™ process. Models This advanced process technology - Thermal Impedance PSPICE and S
Otros transistores... HUF75343G3 , HUF75343P3 , HUF75343S3S , HUF75344G3 , HUF75344P3 , HUF75344S3S , HUF75345G3 , HUF75345P3 , IRF9Z34 , HUF75545P3 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , HUF75637P3 , HUF75637S3S , HUF75639G3 .
