FDMC89521L Todos los transistores

 

FDMC89521L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC89521L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.9 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.017 Ohm

Empaquetado / Estuche: MLP3x3

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FDMC89521L Datasheet (PDF)

1.1. fdmc89521l.pdf Size:351K _fairchild_semi

FDMC89521L
FDMC89521L

July 2013 FDMC89521L Dual N-Channel PowerTrench® MOSFET 60 V, 8.2 A, 17 mΩ Features General Description This device includes two 60 V N-Channel MOSFETs in a dual Max rDS(on) = 17 mΩ at VGS = 10 V, ID = 8.2 A Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6.7 A enhanced for exceptional thermal performance. Termination is Lead-free

5.1. fdmc8010et30.pdf Size:413K _upd-mosfet

FDMC89521L
FDMC89521L

January 2015 FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175°C Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for

5.2. fdmc86570let60.pdf Size:283K _upd-mosfet

FDMC89521L
FDMC89521L

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 mΩ at VGS = 10

 5.3. fdmc8676.pdf Size:263K _upd-mosfet

FDMC89521L
FDMC89521L

December 2007 FDMC8676 tm N-Channel PowerTrench® MOSFET 30V, 18A, 5.9mΩ Features General Description Max rDS(on) = 5.9mΩ at VGS = 10V, ID = 14.7A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3mΩ at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge Low Prof

5.4. fdmc8678s.pdf Size:282K _upd-mosfet

FDMC89521L
FDMC89521L

July 2009 FDMC8678S tm N-Channel Power Trench® SyncFETTM 30V, 18A, 5.2mΩ Features General Description Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A The FDMC8678S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A and package technologies have been combined to offer the Advanced Pack

 5.5. fdmc86262p.pdf Size:328K _upd-mosfet

FDMC89521L
FDMC89521L

April 2015 FDMC86262P P-Channel PowerTrench® MOSFET -150 V, -2 A, 307 mΩ Features General Description This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A Semiconductor’s advanced PowerTrench® technology. This Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A very high density process is especially tailored to minimize on- state resis

5.6. fdmc86340et80.pdf Size:281K _upd-mosfet

FDMC89521L
FDMC89521L

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 68 A, 6.5 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 mΩ at VGS = 10

5.7. fdmc86160et100.pdf Size:293K _upd-mosfet

FDMC89521L
FDMC89521L

January 2015 FDMC86160ET100 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 14 mΩ at VGS = 10 V,

5.8. fdmc86260et150.pdf Size:269K _upd-mosfet

FDMC89521L
FDMC89521L

January 2015 FDMC86260ET150 N-Channel Power Trench® MOSFET 150 V, 25 A, 34 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A been especially tailored to minimize the on-state resistance and Max rDS(on) = 44 mΩ at

5.9. fdmc8854.pdf Size:354K _fairchild_semi

FDMC89521L
FDMC89521L

June 2014 FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features General Description Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A process. It has been optimized for power management Low Profile - 1mm max in Power 33 applica

5.10. fdmc86116lz.pdf Size:318K _fairchild_semi

FDMC89521L
FDMC89521L

November 2013 FDMC86116LZ N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process Max rDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A that incorporates Shielded Gate technology. This process has Max r

5.11. fdmc8010.pdf Size:545K _fairchild_semi

FDMC89521L
FDMC89521L

December 2014 FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is

5.12. fdmc86106lz.pdf Size:318K _fairchild_semi

FDMC89521L
FDMC89521L

December 2010 FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 m? Features General Description Max rDS(on) = 103 m? at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 153 m? at VGS = 4.5 V, ID = 2.7 A that has been special tailored to minimize the on-state HBM ESD protect

5.13. fdmc8554.pdf Size:191K _fairchild_semi

FDMC89521L
FDMC89521L

February 2007 FDMC8554 tm N-Channel Power Trench MOSFET 20V, 16.5A, 5m? Features General Description Max rDS(on) = 5m? at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench process. Max rDS(on) = 6.4m? at VGS = 4.5V, ID = 14A It has been optimized for switching performance and ultra low Low Profile - 1mm max in

5.14. fdmc8588dc.pdf Size:395K _fairchild_semi

FDMC89521L
FDMC89521L

June 2012 FDMC8588DC N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ Features General Description Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output capacita

5.15. fdmc86265p.pdf Size:288K _fairchild_semi

FDMC89521L
FDMC89521L

May 2014 FDMC86265P P-Channel PowerTrench® MOSFET -150 V, -1 A, 1.2 Ω Features General Description Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A has been optimized for the on-state resistance and yet maintain Very low RDS-on mid

5.16. fdmc86244.pdf Size:328K _fairchild_semi

FDMC89521L
FDMC89521L

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m? Features General Description Max rDS(on) = 134 m? at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m? at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Profile - 1

5.17. fdmc8884.pdf Size:347K _fairchild_semi

FDMC89521L
FDMC89521L

October 2010 FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 m? Features General Description Max rDS(on) = 19 m? at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m? at VGS = 4.5 V, ID = 7.2 A been especially tailored to minimize the on-state resistance. This High performance t

5.18. fdmc86520l.pdf Size:269K _fairchild_semi

FDMC89521L
FDMC89521L

August 2011 FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

5.19. fdmc86260.pdf Size:246K _fairchild_semi

FDMC89521L
FDMC89521L

December 2012 FDMC86260 N-Channel Power Trench® MOSFET 150 V, 16 A, 34 mΩ Features General Description Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A been especially tailored to minimize the on-state resistance and High perf

5.20. fdmc8878.pdf Size:244K _fairchild_semi

FDMC89521L
FDMC89521L

December 2010 FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7A process. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.3 app

5.21. fdmc86012.pdf Size:245K _fairchild_semi

FDMC89521L
FDMC89521L

October 2012 FDMC86012 N-Channel Power Trench® MOSFET 30 V, 88 A, 2.7 mΩ Features General Description Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 23 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 4.7 mΩ at VGS = 2.5 V, ID = 17.5 A MOSFET construction, the various components of gate charge High p

5.22. fdmc86320.pdf Size:492K _fairchild_semi

FDMC89521L
FDMC89521L

June 2014 FDMC86320 N-Channel Power Trench® MOSFET 80 V, 22 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

5.23. fdmc8588.pdf Size:345K _fairchild_semi

FDMC89521L
FDMC89521L

November 2014 FDMC8588 N-Channel PowerTrench® MOSFET 25 V, 40 A, 5.7 mΩ Features General Description Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node State-of-the-art switching performance ringing of DC/DC converters using either synchronous or Lower output cap

5.24. fdmc86259p.pdf Size:172K _fairchild_semi

FDMC89521L
FDMC89521L

February 2014 FDMC86259P P-Channel PowerTrench® MOSFET -150 V, -13 A, 107 m Features General Description Max rDS(on) = 107 m at VGS = -10 V, ID = -3 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has Max rDS(on) = 137 m at VGS = -6 V, ID = -2.7 A been especially tailored to minimize the on-state resistance and Very l

5.25. fdmc8200s.pdf Size:461K _fairchild_semi

FDMC89521L
FDMC89521L

March 2011 FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 m?, 20 m? Features General Description This device includes two specialized N-Channel MOSFETs in a Q1: N-Channel due power33(3mm X 3mm MLP) package. The switch node has Max rDS(on) = 20 m? at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. The control

5.26. fdmc86570l.pdf Size:373K _fairchild_semi

FDMC89521L
FDMC89521L

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 56 A, 4.3 mΩ Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

5.27. fdmc8200.pdf Size:479K _fairchild_semi

FDMC89521L
FDMC89521L

June 2009 FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 m? and 20 m? Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 20 m? at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 32 m? at VGS = 4.5 V, ID = 5 A r

5.28. fdmc86520dc.pdf Size:277K _fairchild_semi

FDMC89521L
FDMC89521L

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 mΩ

5.29. fdmc86102.pdf Size:344K _fairchild_semi

FDMC89521L
FDMC89521L

July 2009 FDMC86102 N-Channel Power Trench MOSFET 100 V, 20 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m? at VGS = 6 V, ID = 5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in P

5.30. fdmc86324.pdf Size:299K _fairchild_semi

FDMC89521L
FDMC89521L

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m? at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in Pow

5.31. fdmc8026s.pdf Size:349K _fairchild_semi

FDMC89521L
FDMC89521L

March 2011 FDMC8026S N-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 m? Features General Description The FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m? at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest rDS(on) wh

5.32. fdmc86160.pdf Size:195K _fairchild_semi

FDMC89521L
FDMC89521L

September 2014 FDMC86160 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 43 A, 14 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 23 mΩ

5.33. fdmc8622.pdf Size:395K _fairchild_semi

FDMC89521L
FDMC89521L

December 2010 FDMC8622 N-Channel Power Trench MOSFET 100 V, 16 A, 56 m? Features General Description Max rDS(on) = 56 m? at VGS = 10 V, ID = 4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m? at VGS = 6 V, ID = 3 A been optimized for rDS(on), switching performance and High performance trench technology

5.34. fdmc8321l.pdf Size:263K _fairchild_semi

FDMC89521L
FDMC89521L

February 2013 FDMC8321L N-Channel Power Trench® MOSFET 40 V, 49 A, 2.5 mΩ Features General Description Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 22 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 18 A ringing of DC/DC converters using either synchronous or Advanced

5.35. fdmc8360l.pdf Size:367K _fairchild_semi

FDMC89521L
FDMC89521L

June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 mΩ

5.36. fdmc86248.pdf Size:256K _fairchild_semi

FDMC89521L
FDMC89521L

September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

5.37. fdmc8030.pdf Size:318K _fairchild_semi

FDMC89521L
FDMC89521L

July 2013 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features General Description Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A enhanced for exceptional thermal performance. Max rDS(on) = 28 mΩ at VGS =

5.38. fdmc86102lz.pdf Size:260K _fairchild_semi

FDMC89521L
FDMC89521L

April 2011 FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 m? Features General Description Max rDS(on) = 24 m? at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 35 m? at VGS = 4.5 V, ID = 5.5 A that has been special tailored to minimize the on-state HBM ESD protection lev

5.39. fdmc86139p.pdf Size:382K _fairchild_semi

FDMC89521L
FDMC89521L

June 2014 FDMC86139P P-Channel PowerTrench® MOSFET -100 V, -15 A, 67 mΩ Features General Description Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A very high density process is especially tailored to minimize Very low RDS-

5.40. fdmc8462.pdf Size:290K _fairchild_semi

FDMC89521L
FDMC89521L

March 2008 FDMC8462 tm N-Channel Power Trench MOSFET 40V, 20A, 5.8m? Features General Description Max rDS(on) = 5.8m? at VGS = 10V, ID = 13.5A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 8.0m? at VGS = 4.5V, ID = 11.8A been especially tailored to minimize the on-state resistance and Low Profile - 1mm max

5.41. fdmc8882.pdf Size:339K _fairchild_semi

FDMC89521L
FDMC89521L

September 2010 FDMC8882 N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 A been especially tailored to minimize the on-state resistance. This High perf

5.42. fdmc86261p.pdf Size:379K _fairchild_semi

FDMC89521L
FDMC89521L

June 2014 FDMC86261P P-Channel PowerTrench® MOSFET -150 V, -9 A, 160 mΩ Features General Description Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A very high density process is especially tailored to minimize Very low RD

5.43. fdmc8032l.pdf Size:333K _fairchild_semi

FDMC89521L
FDMC89521L

October 2013 FDMC8032L Dual N-Channel PowerTrench® MOSFET 40 V, 7 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A enhanced for exceptional thermal performance. Low Inductance Packaging Short

5.44. fdmc8327l.pdf Size:290K _fairchild_semi

FDMC89521L
FDMC89521L

October 2013 FDMC8327L N-Channel PowerTrench® MOSFET 40 V, 14 A, 9.7 mΩ Features General Description Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Low Pro

5.45. fdmc8296.pdf Size:353K _fairchild_semi

FDMC89521L
FDMC89521L

 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0V 30 V BVDSS Breakdown Voltage Temperature ID = 250 A, referenced to 25°C 17 mV/°C TJ Coefficient VDS = 24V, 1 IDSS Zero Gate Voltage Drain Current A VGS = 0V, TJ = 125°C 250 IGSS Gate t

5.46. fdmc86340.pdf Size:241K _fairchild_semi

FDMC89521L
FDMC89521L

January 2014 FDMC86340 N-Channel Shielded Gate Power Trench® MOSFET 80 V, 48 A, 6.5 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 8.5 m

5.47. fdmc8321ldc.pdf Size:561K _fairchild_semi

FDMC89521L
FDMC89521L

December 2014 FDMC8321LDC N-Channel Power Trench® MOSFET 40 V, 108 A, 2.5 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 mΩ at VGS = 4.

5.48. fdmc8015l.pdf Size:322K _fairchild_semi

FDMC89521L
FDMC89521L

April 2011 FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 m? Features General Description Max rDS(on) = 26 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has Max rDS(on) = 36 m? at VGS = 4.5 V, ID = 6 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in

5.49. fdmc86240.pdf Size:315K _fairchild_semi

FDMC89521L
FDMC89521L

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m? Features General Description Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max

5.50. fdmc8651.pdf Size:300K _fairchild_semi

FDMC89521L
FDMC89521L

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m? Features General Description Max rDS(on) = 6.1 m? at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m? at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profile - 1 mm

5.51. fdmc86102l.pdf Size:313K _fairchild_semi

FDMC89521L
FDMC89521L

December 2010 FDMC86102L N-Channel Power Trench MOSFET 100 V, 18 A, 23 m? Features General Description Max rDS(on) = 23 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 34 m? at VGS = 4.5 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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FDMC89521L
  FDMC89521L
  FDMC89521L
  FDMC89521L
 

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: QS8M51 | QS8M13 | QS8M11 | QS8K21 | QS8K2 | QS8K13 | QS8K11 | QS8J5 | QS8J4 | QS8J2 | QS8J13 | QS8J12 | QS8J11 | QS8F2 | QS6U24 |

 

 

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