FDMC7208S Todos los transistores

July 2013 FDMC7208S Dual N-Channel PowerTrench MOSFET Q1 30 V, 12 A, 9.0 m Q2 30 V, 16 A, 6.4 m Features General Description Q1 N-Channel This device includes two 30V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is en- Max rDS(on) = 9.0 m at VGS = 10 V, ID = 12 A hanced for exceptional thermal performance. Max rDS(on) = 11.0 m at VGS =

June 2009 FDMC7200 Dual N-Channel PowerTrench MOSFET 30 V, 12 m and 23.5 m Features General Description Q1 N-Channel This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 23.5 m at VGS = 10 V, ID = 6 A has been internally connected to enable easy placement and Max rDS(on) = 38 m at VGS = 4.5

June 2014 FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 m , 10 m Features General Description This device includes two specialized N-Channel MOSFETs in a Q1 N-Channel dual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 m at VGS = 10 V, ID = 6 A been internally connected to enable easy placement and routing of synchronous buck converters. Th

January 2011 FDMC7660DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.2 m at VGS = 10 V, ID = 22 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

January 2010 FDMC7572S N-Channel Power Trench SyncFETTM 25 V, 40 A, 3.15 m Features General Description Max rDS(on) = 3.15 m at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7 m at VGS = 4.5 V, ID = 18 A package technologies have been combined to offer the lowe

November 2011 FDMC7696 N-Channel PowerTrench MOSFET 30 V, 12 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance.This device

March 2010 FDMC7672 N-Channel Power Trench MOSFET 30 V, 16.9 A, 5.7 m Features General Description Max rDS(on) = 5.7 m at VGS = 10 V, ID = 16.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 15.0 A been especially tailored to minimize the on-state resistance. This High p

June 2010 FDMC7664 N-Channel PowerTrench MOSFET 30 V, 18.8 A, 4.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.2 m at VGS = 10 V, ID = 18.8 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 5.5 m at VGS = 4.5 V, ID = 16.1 A been especially tailored to minimize the on-state resistance. This de

December 2009 FDMC7660S N-Channel Power Trench SyncFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m at VGS = 4.5 V, ID = 18 A and package technologies have been combined to offer the Hi

September 2010 FDMC7672S N-Channel Power Trench SyncFETTM 30 V, 14.8 A, 6.0 m Features General Description This FDMC7672S is produced using Fairchild Semiconductor s Max rDS(on) = 6.0 m at VGS = 10 V, ID = 14.8 A advanced Power Trench process that has been especially Max rDS(on) = 7.1 m at VGS = 4.5 V, ID = 12.4 A tailored to minimize the on-state resistance. This d

September 2010 FDMC7692S N-Channel Power Trench SyncFETTM 30 V, 12.5 A, 9.3 m Features General Description This FDMC7692S is produced using Fairchild Semiconductor s Max rDS(on) = 9.3 m at VGS = 10 V, ID = 12.5 A advanced Power Trench process that has been especially Max rDS(on) = 13.6 m at VGS = 4.5 V, ID = 10.4 A tailored to minimize the on-state resistance. This

December 2009 FDMC7570S N-Channel Power Trench SyncFETTM 25 V, 40 A, 2 m Features General Description The FDMC7570S has been designed to minimize losses in Max rDS(on) = 2 m at VGS = 10 V, ID = 27 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.9 m at VGS = 4.5 V, ID = 21.5 A package technologies have been combined to offer the lowest

June 2011 FDMC7678 N-Channel Power Trench MOSFET 30 V, 19.5 A, 5.3 m Features General Description Max rDS(on) = 5.3 m at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 6.8 m at VGS = 4.5 V, ID = 15.0 A been especially tailored to minimize the on-state resistance. This High

April 2012 FDMC7582 N-Channel PowerTrench MOSFET 25 V, 49 A, 5.0 m Features General Description Max rDS(on) = 5.0 m at VGS = 10 V, ID = 16.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 7.5 m at VGS = 4.5 V, ID = 13.6 A ringing of DC/DC converters using either synchronous or State-of-th

December 2009 FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A been especially tailored to minimize the on-state resistance. This High perfo

March 2010 FDMC7680 N-Channel Power Trench MOSFET 30 V, 14.8 A, 7.2 m Features General Description Max rDS(on) = 7.2 m at VGS = 10 V, ID = 14.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 9.5 m at VGS = 4.5 V, ID = 12.4 A been especially tailored to minimize the on-state resistance. This High p

September 2010 FDMC7692 N-Channel Power Trench MOSFET 30 V, 13.3 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 11.5 m at VGS = 4.5 V, ID = 10.6 A been especially tailored to minimize the on-state resistance. This H

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMC7570S MOSFET N-Channel, POWERTRENCH), SyncFETt 25 V, 40 A, 2 mW www.onsemi.com General Description The FDMC7570S has been designed to minimize losses in power Pin 1 conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth