FCPF600N60Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF600N60Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 630 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FCPF600N60Z MOSFET
- Selecciónⓘ de transistores por parámetros
FCPF600N60Z datasheet
fcp600n60z fcpf600n60z.pdf
November 2013 FCP600N60Z / FCPF600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =
fcp600n60z fcpf600n60z.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcpf600n60z.pdf
isc N-Channel MOSFET Transistor FCPF600N60Z FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
fcpf600n60zl1.pdf
www.onsemi.com FCPF600N60ZL1 N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 510 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 20 nC) and lo
Otros transistores... FDMQ86530L , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , IRLZ44N , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT , FDMS8090 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
Popular searches
2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor | a933 transistor datasheet | a1633 transistor
