FDP032N08B Todos los transistores

 

FDP032N08B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP032N08B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 263 W
   Voltaje máximo drenador - fuente |Vds|: 80 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 111 nC
   Tiempo de subida (tr): 44 nS
   Conductancia de drenaje-sustrato (Cd): 1250 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0033 Ohm
   Paquete / Cubierta: TO220

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FDP032N08B Datasheet (PDF)

 ..1. Size:669K  fairchild semi
fdp032n08b.pdf

FDP032N08B FDP032N08B

November 2013FDP032N08BN-Channel PowerTrench MOSFET80 V, 211 A, 3.3 mFeatures Description RDS(on) = 2.85 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching performance.

 ..2. Size:953K  onsemi
fdp032n08b.pdf

FDP032N08B FDP032N08B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.1. Size:619K  fairchild semi
fdp032n08.pdf

FDP032N08B FDP032N08B

July 2008FDP032N08tmN-Channel PowerTrench MOSFET 75V, 235A, 3.2mFeatures Description RDS(on) = 2.5m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon-ductors adcanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superi

 5.2. Size:517K  onsemi
fdp032n08.pdf

FDP032N08B FDP032N08B

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 5.3. Size:257K  inchange semiconductor
fdp032n08.pdf

FDP032N08B FDP032N08B

isc N-Channel MOSFET Transistor FDP032N08FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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