FCH041N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCH041N60F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 595 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 76 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 277 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 324 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm
   Paquete / Cubierta: TO247

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FCH041N60F Datasheet (PDF)

..1. Size:617K fairchild semi
fch041n60f f085.pdf

April 2015FCH041N60F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 AG Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche TestedG Qualified to AEC Q101DTO-247SS RoHS CompliantDescription Forcurrentpackagedra

..2. Size:594K fairchild semi
fch041n60f.pdf

December 2013FCH041N60FN-Channel SuperFET II FRFET MOSFET600 V, 76 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This techn

..3. Size:906K onsemi
fch041n60f.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..4. Size:261K inchange semiconductor
fch041n60f.pdf

isc N-Channel MOSFET Transistor FCH041N60FFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV Ga

5.1. Size:559K fairchild semi
fch041n60e.pdf

December 2013FCH041N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 77 A, 41 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 285 nC

6.1. Size:635K fairchild semi
fch041n65f f085.pdf

November 2014FCH041N65F_F085N-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 m DFeatures Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS CapabilityG Qualified to AEC Q101G RoHS CompliantDTO-247SSDescription SuperFET II MOSFET is Fairchild Semiconductors brand-newForcurrentpackagedrawing,

6.2. Size:1373K fairchild semi
fch041n65f.pdf

December 2014FCH041N65FN-Channel SuperFET II FRFET MOSFET650 V, 76 A, 41 mFeatures Description 700 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC

6.3. Size:416K onsemi
fch041n65f-f085.pdf

MOSFET N-Channel,SUPERFET) II, FRFET)650 V, 76 A, 41 mWFCH041N65F-F085DescriptionSuperFET II Mosfet is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gatecharge performance. This technology is tailored to minimizeVDS RDS(ON) MAX ID MAXcondu

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