FDMS8320LDC Todos los transistores

 

FDMS8320LDC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8320LDC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 2255 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm

Encapsulados: PQFN5X6

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FDMS8320LDC datasheet

 ..1. Size:292K  fairchild semi
 fdms8320ldc.pdf pdf_icon

FDMS8320LDC

December 2014 FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 A This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductor s advanced Power Trench process. Advancements in both silicon and Dual CoolTM package Advanced Packa

 5.1. Size:413K  fairchild semi
 fdms8320l.pdf pdf_icon

FDMS8320LDC

October 2014 FDMS8320L N-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 m Features General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A This N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

 5.2. Size:478K  onsemi
 fdms8320l.pdf pdf_icon

FDMS8320LDC

FDMS8320L N-Channel PowerTrench MOSFET General Description 40 V, 248 A, 1.1 m This N-Channel MOSFET has been designed specifically to Features improve the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)

 8.1. Size:268K  fairchild semi
 fdms8350l.pdf pdf_icon

FDMS8320LDC

November 2014 FDMS8350L N-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A been especially tailored to minimize the on-state resistance and Advanc

MOSTRAR MÁS

Otros transistores... FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B , FCPF36N60N , FDD770N15A , FDMS8820 , 2N7002 , HUF76639SF085 , FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , FCD380N60E , FCD900N60Z , FCD600N60Z , FDD1600N10ALZD .

History: FDMC86160

 

 

 

 

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