FDMS8320LDC Todos los transistores

 

FDMS8320LDC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMS8320LDC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 2255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
   Paquete / Cubierta: PQFN5X6
 

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FDMS8320LDC Datasheet (PDF)

 ..1. Size:292K  fairchild semi
fdms8320ldc.pdf pdf_icon

FDMS8320LDC

December 2014FDMS8320LDCN-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductors advanced Power Trench process.Advancements in both silicon and Dual CoolTM package Advanced Packa

 5.1. Size:413K  fairchild semi
fdms8320l.pdf pdf_icon

FDMS8320LDC

October 2014FDMS8320LN-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

 5.2. Size:478K  onsemi
fdms8320l.pdf pdf_icon

FDMS8320LDC

FDMS8320LN-Channel PowerTrench MOSFETGeneral Description40 V, 248 A, 1.1 mThis N-Channel MOSFET has been designed specifically to Featuresimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)

 8.1. Size:268K  fairchild semi
fdms8350l.pdf pdf_icon

FDMS8320LDC

November 2014FDMS8350LN-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 Abeen especially tailored to minimize the on-state resistance and Advanc

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