FDD850N10LD Todos los transistores

 ..1. Size:807K  fairchild semi
 fdd850n10ld.pdf

November 2013 FDD850N10LD BoostPak (N-Channel PowerTrench MOSFET + Diode) 100 V, 15.3 A, 75 m Features Description RDS(on) = 61 m (Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- RDS(on) = 64 m (Typ.) @ VGS = 5.0 V, ID = 12 A mize the on-state resistance while maint

 4.1. Size:319K  fairchild semi
 fdd850n10l.pdf

December 2010 FDD850N10L N-Channel PowerTrench MOSFET 100V, 15.7A, 75m Features Description RDS(on) = 61m ( Typ.) @ VGS = 10V, ID = 12A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advance PowerTrench process that has been especially RDS(on) = 64m ( Typ.) @ VGS = 5V, ID = 12A tailored to minimize the on-state resistance and yet maintain super

 4.2. Size:287K  inchange semiconductor
 fdd850n10l.pdf

isc N-Channel MOSFET Transistor FDD850N10L FEATURES Drain Current I =15.7A@ T =25 D C Drain Source Voltage V =100V(Min) DSS Static Drain-Source On-Resistance R =75m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 9.1. Size:388K  fairchild semi
 fdd8586 fdu8586.pdf

January 2007 FDD8586/FDU8586 tm N-Channel PowerTrench MOSFET 20V, 35A, 5.5m Features General Description Max rDS(on) = 5.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.5m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It h

 9.2. Size:333K  fairchild semi
 fdd8580 fdu8580.pdf

July 2006 FDD8580/FDU8580 tm N-Channel PowerTrench MOSFET 20V, 35A, 9m Features General Description This N-Channel MOSFET has been designed specifically Max rDS(on) = 9m at VGS = 10V, ID = 35A to improve the overall efficiency of DC/DC converters using Max rDS(on) =13m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWM controllers. It has been opti

 9.3. Size:813K  cn vbsemi
 fdd8580-6.pdf

FDD8580&-6 www.VBsemi.tw N-Channel 20-V (D-S)175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 65 20 20 0.008 @ VGS = 2.5 V 45 D TO-252 G Drain Connected to Tab G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Par

 9.4. Size:287K  inchange semiconductor
 fdd8580.pdf

isc N-Channel MOSFET Transistor FDD8580 FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =9.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 9.5. Size:287K  inchange semiconductor
 fdd8586.pdf

isc N-Channel MOSFET Transistor FDD8586 FEATURES Drain Current I =35A@ T =25 D C Drain Source Voltage V =20V(Min) DSS Static Drain-Source On-Resistance R =5.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d