FDMB2308PZ Todos los transistores

 ..1. Size:322K  fairchild semi
 fdmb2308pz.pdf

April 2014 FDMB2308PZ Dual Common Drain P-Channel PowerTrench MOSFET -20 V, -7 A, 36 m Features General Description Max rS1S2(on) = 36 m at VGS = -4.5 V, ID = -5.7 A This device is designed specifically as a single package solution Max rS1S2(on) = 50 m at VGS = -2.5 V, ID = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features

 7.1. Size:329K  fairchild semi
 fdmb2307nz.pdf

April 2014 FDMB2307NZ Dual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 m Features General Description Max rS1S2(on) = 16.5 m at VGS = 4.5 V, ID = 8 A This device is designed specifically as a single package solution Max rS1S2(on) = 18 m at VGS = 4.2 V, ID = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features t

 7.2. Size:437K  onsemi
 fdmb2307nz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur