FDMB2308PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 2014FDMB2308PZDual Common Drain P-Channel PowerTrench MOSFET -20 V, -7 A, 36 mFeaturesGeneral Description Max rS1S2(on) = 36 m at VGS = -4.5 V, ID = -5.7 AThis device is designed specifically as a single package solution Max rS1S2(on) = 50 m at VGS = -2.5 V, ID = -4.6 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features

April 2014FDMB2307NZDual Common Drain N-Channel PowerTrench MOSFET 20 V, 9.7 A, 16.5 mFeaturesGeneral Description Max rS1S2(on) = 16.5 m at VGS = 4.5 V, ID = 8 AThis device is designed specifically as a single package solution Max rS1S2(on) = 18 m at VGS = 4.2 V, ID = 7.4 A for Li-Ion battery pack protection circuit and other ultra-portable applications. It features t

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur