FDB9406F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

June 2014FDB9406_F085N-Channel PowerTrench MOSFET40 V, 110 A, 1.8 m DDFeatures Typ RDS(on) = 1.31m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine ControlForcurrentpackagedrawing,pleaserefertotheFairchild Po

FDB9406L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 110 A, 1.5 mFeatures Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/A

FDB9406-F085N-Channel PowerTrench MOSFET DD40 V, 110 A, 1.8 mFeaturesG Typ RDS(on) = 1.31m at VGS = 10V, ID = 80AGS Typ Qg(tot) = 107nC at VGS = 10V, ID = 80ATO-263 UIS Capability SFDB SERIES RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated

isc N-Channel MOSFET Transistor FDB9406LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor FDB9406FEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.8m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid