FDB9406F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB9406F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 81 nS

Cossⓘ - Capacitancia de salida: 2015 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: TO263 D2PAK

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FDB9406F085 datasheet

 7.1. Size:517K  fairchild semi
 fdb9406 f085.pdf pdf_icon

FDB9406F085

June 2014 FDB9406_F085 N-Channel PowerTrench MOSFET 40 V, 110 A, 1.8 m D D Features Typ RDS(on) = 1.31m at VGS = 10V, ID = 80A Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S FDB SERIES Applications Automotive Engine Control For current package drawing, please refer to the Fairchild Po

 7.2. Size:504K  onsemi
 fdb9406l-f085.pdf pdf_icon

FDB9406F085

FDB9406L-F085 N-Channel Logic Level PowerTrench MOSFET 40 V, 110 A, 1.5 m Features Typical RDS(on) = 1.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 121 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/A

 7.3. Size:420K  onsemi
 fdb9406-f085.pdf pdf_icon

FDB9406F085

FDB9406-F085 N-Channel PowerTrench MOSFET D D 40 V, 110 A, 1.8 m Features G Typ RDS(on) = 1.31m at VGS = 10V, ID = 80A G S Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A TO-263 UIS Capability S FDB SERIES RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrated

 7.4. Size:288K  inchange semiconductor
 fdb9406l.pdf pdf_icon

FDB9406F085

isc N-Channel MOSFET Transistor FDB9406L FEATURES Drain Current I =110A@ T =25 D C Drain Source Voltage V =40V(Min) DSS Static Drain-Source On-Resistance R =1.8m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

MOSTRAR MÁS

Otros transistores... FDD850N10LD, FCH072N60F, FDMB2308PZ, FDMS3669S, FDZ1323NZ, FDPC8012S, FDMS86152, FDN537N, AON6380, FDD120AN15F085, FDPC4044, FDMC8360L, FDMC86340, FDMC86570L, FDN371N, FCH104N60F, FDMS86350