FDMC8360L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC8360L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 27 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 1230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
Paquete / Cubierta: PQFN3.3X3.3
Búsqueda de reemplazo de FDMC8360L MOSFET
FDMC8360L Datasheet (PDF)
fdmc8360l.pdf

June 2013FDMC8360LN-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that Max rDS(on) = 2.1 m at VGS = 10 V, ID = 27 Aincorporates Shielded Gate technology. This process has been Max rDS(on) = 3.1 m
fdmc8327l.pdf

October 2013FDMC8327LN-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Low Pro
fdmc8321l.pdf

February 2013FDMC8321LN-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 Aringing of DC/DC converters using either synchronous or Advanced
fdmc8321ldc.pdf

December 2014FDMC8321LDCN-Channel Power Trench MOSFET40 V, 108 A, 2.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.
Otros transistores... FDMS3669S , FDZ1323NZ , FDPC8012S , FDMS86152 , FDN537N , FDB9406F085 , FDD120AN15F085 , FDPC4044 , IRFP450 , FDMC86340 , FDMC86570L , FDN371N , FCH104N60F , FDMS86350 , FDU6N25 , HUF76419SF085 , FDMS86252L .
History: TK7P60W | PT8822 | SSP90R1K5S | WMK175N10LG4 | SL15N10A | WMN07N80M3 | IRF7331PBF-1
History: TK7P60W | PT8822 | SSP90R1K5S | WMK175N10LG4 | SL15N10A | WMN07N80M3 | IRF7331PBF-1



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