FDMS86350 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

November 2013FDMS86350N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 ASemiconductors advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 Abeen especially tailored to minimize the on-state resistance and Advanced

FDMS86350N-Channel PowerTrench MOSFETGeneral Description80 V, 130 A, 2.4 mThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has Featuresbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8

January 2015FDMS86350ET80N-Channel PowerTrench MOSFET80 V, 198 A, 2.4 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 Abeen especially tailored to minimize the on-state resistance and yet maintain superior sw

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

October 2014FDMS86320N-Channel PowerTrench MOSFET80 V, 44 A, 11.7 mFeatures General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 Aringing of DC/DC converters using either synchronous or Advanced P

October 2010FDMS86322N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance and Advanced P

March 2015FDMS86369_F085N-Channel PowerTrench MOSFET80 V, 65 A, 7.5 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcurrent

October 2014FDMS86310N-Channel PowerTrench MOSFET80 V, 50 A, 4.8 mFeatures General Description Max rDS(on) = 4.8 m at VGS = 10 V, ID = 17 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 m at VGS = 8 V, ID = 14 Aringing of DC/DC converters using either synchronous or Advanced Packa

December 2014FDMS86300DCN-Channel Dual CoolTM PowerTrench MOSFET80 V, 110 A, 3.1 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a

December 2014FDMS86368_F085N-Channel PowerTrench MOSFET80 V, 80 A, 4.5 m Features Typical RDS(on) = 3.7 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcu

August 2011FDMS86300N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 mFeatures General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 Aringing of DC/DC converters using either synchronous or Advanced Pac

2021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/62021/8/6 ONSM-S-A0003584697-1.pdfhttps://rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86381-F085N-Channel PowerTrench MOSFET 80 V, 30 A, 22 mFeatures Typical RDS(on) = 17.2 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator D

FDMS86300DCPOWERTRENCH) MOSFET,N-Channel, DUAL COOL) 5680 V, 110 A, 3.1 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process thatELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconand DUAL COOL package technologies have been combined toS Doffer the lowes

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur