FDU6N25 Todos los transistores

 ..1. Size:417K  fairchild semi
 fdu6n25.pdf

November 2013 FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Features Description RDS(on) = 0.9 (Typ.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF) provi

 ..2. Size:713K  fairchild semi
 fdd6n25 fdu6n25.pdf

February 2007 TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description 4.4A, 250V, RDS(on) = 1.1 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 4.5 nC) stripe, DMOS technology. Low Crss ( typical 5 pF) This advanced technology has been especially ta

 8.1. Size:376K  fairchild semi
 fdd6n20 fdu6n20.pdf

May 2007 UniFETTM FDD6N20 / FDU6N20 tm N-Channel MOSFET 200V, 4.5A, 0.8 Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 4.7nC ) stripe, DMOS technology. Low Crss ( Typ. 6.3pF ) This advanced technology has b

 9.1. Size:375K  fairchild semi
 fdu6n50f.pdf

January 2012 UniFET TM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology h

 9.2. Size:458K  fairchild semi
 fdd6n50tf fdd6n50tm fdu6n50 fdu6n50tu.pdf

November 2013 FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 p

 9.3. Size:851K  fairchild semi
 fdd6n50 fdu6n50.pdf

January 2006 TM UniFET FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tai

 9.4. Size:648K  fairchild semi
 fdd6n50f fdu6n50f.pdf

July 2007 UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild s proprietary, planar Low gate charge ( Typ. 15nC) stripe, DMOS technology. Low Crss ( Typ. 6.3pF) This advance technology has

 9.5. Size:928K  onsemi
 fdd6n50 fdu6n50.pdf

FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Description Features RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF) provide bet