HUF75637P3 Todos los transistores

 

HUF75637P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF75637P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 155 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

HUF75637P3 Datasheet (PDF)

 6.1. Size:200K  fairchild semi
 huf75637s3 huf75637s3st.pdf pdf_icon

HUF75637P3

HUF75637P3, HUF75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN (FLANGE) Ultra Low On-ResistanceGATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice and S

 6.2. Size:201K  fairchild semi
 huf75637.pdf pdf_icon

HUF75637P3

HUF75637P3, HUF75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN (FLANGE) Ultra Low On-ResistanceGATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice and S

 7.1. Size:227K  fairchild semi
 huf75639s3st.pdf pdf_icon

HUF75637P3

HUF75639G3, HUF75639P3, HUF75639S3S,HUF75639S3Data Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber T

 7.2. Size:254K  fairchild semi
 huf75631sk8.pdf pdf_icon

HUF75637P3

HUF75631SK8Data Sheet December 20015.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.039, VGS = 10V5 Simulation Models1 - Temperature Compensated PSPICE and SABER 2Electrical Models34- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comSymbol

MOSTRAR MÁS

Otros transistores... HUF75345G3 , HUF75345P3 , HUF75345S3S , HUF75545P3 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , IRF520 , HUF75637S3S , HUF75639G3 , HUF75639P3 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 .

History: NTMFS4925NT1G | SHD226309 | SDF07N80 | VS3620DP-G | 2SJ152

 

 
Back to Top

 


 
.