HUF75637P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75637P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 155 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET HUF75637P3
HUF75637P3 Datasheet (PDF)
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huf75637.pdf
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huf75631sk8.pdf
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huf75631s3s.pdf
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huf75631sk8t.pdf
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huf75631s3st.pdf
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Otros transistores... HUF75345G3 , HUF75345P3 , HUF75345S3S , HUF75545P3 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , 2N7000 , HUF75637S3S , HUF75639G3 , HUF75639P3 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 .
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