FDMA908PZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMA908PZ
   Código: 908
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 24 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 649 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
   Paquete / Cubierta: MICROFET2X2

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FDMA908PZ Datasheet (PDF)

..1. Size:336K fairchild semi
fdma908pz.pdf

February 2014FDMA908PZSingle P-Channel PowerTrench MOSFET-12 V, -12 A, 12.5 mFeatures Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 AGeneral Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,

..2. Size:381K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:500K fairchild semi
fdma905p.pdf

June 2014FDMA905PSingle P-Channel PowerTrench MOSFET -12 V, -10 A, 16 mFeatures General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 Aapplications. It features a MOSFET with low on-state resista

8.2. Size:972K onsemi
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8.3. Size:468K shenzhen
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Shenzhen Tuofeng Semiconductor Technology Co., LtdFDMA905NCE P-Channel Enhancement Mode Power MOSFET Description DThe FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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