FDS6679 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 2005 FDS6679 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. RDS(ON) = 9 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 13 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery chargers.

October 2001 FDS6679Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 13 A, 30 V. R = 9 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 13 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers, and battery charge

March 2009FDS6679AZtmP-Channel PowerTrench MOSFET -30V, -13A, 9mGeneral Description FeaturesThis P-Channel MOSFET is producted using Fairchild Max rDS(on) = 9.3m at VGS = -10V, ID = -13ASemiconductors advanced PowerTrench process that has Max rDS(on) = 14.8m at VGS = -4.5V, ID = -11Abeen especially tailored to minimize the on-stateresistance. Extended VGS r

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FDS6679AZwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G