FDMC8032L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC8032L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 12 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.02 Ohm

Empaquetado / Estuche: MLP3x3

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FDMC8032L Datasheet (PDF)

1.1. fdmc8032l.pdf Size:333K _fairchild_semi

October 2013 FDMC8032L Dual N-Channel PowerTrench® MOSFET 40 V, 7 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A enhanced for exceptional thermal performance. Low Inductance Packaging Short

3.1. fdmc8030.pdf Size:318K _fairchild_semi

July 2013 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features General Description Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A enhanced for exceptional thermal performance. Max rDS(on) = 28 mΩ at VGS =

4.1. fdmc8010et30.pdf Size:413K _upd-mosfet

January 2015 FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175°C Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for

4.2. fdmc8026s.pdf Size:349K _fairchild_semi

March 2011 FDMC8026S N-Channel PowerTrench� SyncFETTM 30 V, 21 A, 4.4 m? Features General Description The FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m? at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest rDS(on) wh

4.3. fdmc8015l.pdf Size:322K _fairchild_semi

April 2011 FDMC8015L N-Channel Power Trench� MOSFET 40 V, 18 A, 26 m? Features General Description Max rDS(on) = 26 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench� process that has Max rDS(on) = 36 m? at VGS = 4.5 V, ID = 6 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in

4.4. fdmc8010.pdf Size:545K _fairchild_semi

December 2014 FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is

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