FDMD82100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMD82100
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 2.1 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.019 Ohm
Empaquetado / Estuche: PQFN3.3X512L
Búsqueda de reemplazo de MOSFET FDMD82100
FDMD82100 Datasheet (PDF)
1.1. fdmd82100l.pdf 
Size:335K _fairchild_semi
June 2014 FDMD82100L Dual N-Channel PowerTrench® MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A internally connected for half/full bridge, low source inductance
1.2. fdmd82100.pdf Size:274K _fairchild_semi
June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A internally connected for half/full bridge, low source inductance Ideal
4.1. fdmd8280.pdf Size:538K _fairchild_semi
October 2014 FDMD8280 Dual N-Channel Power Trench® MOSFET 80 V, 40 A, 8.2 mΩ Features General Description Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A internally connected for half/full bridge, low source inductance Ide
Otros transistores... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .
