FDMD82100 Todos los transistores

 

FDMD82100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMD82100

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2.1 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.019 Ohm

Empaquetado / Estuche: PQFN3.3X512L

Búsqueda de reemplazo de MOSFET FDMD82100

 

FDMD82100 Datasheet (PDF)

1.1. fdmd82100l.pdf Size:335K _fairchild_semi

FDMD82100
FDMD82100

June 2014 FDMD82100L Dual N-Channel PowerTrench® MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A internally connected for half/full bridge, low source inductance

1.2. fdmd82100.pdf Size:274K _fairchild_semi

FDMD82100
FDMD82100

June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A internally connected for half/full bridge, low source inductance Ideal

 4.1. fdmd8280.pdf Size:538K _fairchild_semi

FDMD82100
FDMD82100

October 2014 FDMD8280 Dual N-Channel Power Trench® MOSFET 80 V, 40 A, 8.2 mΩ Features General Description Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A internally connected for half/full bridge, low source inductance Ide

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