FDMD82100 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMD82100
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.2 nS
Cossⓘ - Capacitancia de salida: 176 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Paquete / Cubierta: PQFN3.3X512L
Búsqueda de reemplazo de FDMD82100 MOSFET
FDMD82100 Datasheet (PDF)
fdmd82100.pdf

June 2014FDMD82100Dual N-Channel Power Trench MOSFET 100 V, 25 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 m at VGS = 6 V, ID = 5.5 Ainternally connected for half/full bridge, low source inductance Ideal
fdmd82100l.pdf

June 2014FDMD82100LDual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mFeatures General Description Max rDS(on) = 19.5 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 m at VGS = 4.5 V, ID = 5.7 Ainternally connected for half/full bridge, low source inductance
fdmd8280.pdf

October 2014FDMD8280Dual N-Channel Power Trench MOSFET 80 V, 40 A, 8.2 mFeatures General Description Max rDS(on) = 8.2 m at VGS = 10 V, ID = 11 AThis device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 m at VGS = 8 V, ID = 9.5 Ainternally connected for half/full bridge, low source inductance Ide
fdmd8900.pdf

June 2015FDMD8900N-Channel PowerTrench MOSFETQ1: 30 V, 66 A, 4 m Q2: 30 V, 42 A, 5.5 mFeatures General DescriptionQ1: N-ChannelThis devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS Max rDS(on) = 4 m at VGS = 10 V, ID = 19 Adrain are internally connected providing a low source inductance Max rDS(on) =
Otros transistores... FCP104N60F , FCH47N60FF085 , FDMC8032L , NDS351N , FDMA8051L , FDMA86551L , FDMC612PZ , FDMS36101LF085 , IRFZ48N , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , FDPC8016S , FCPF400N80Z , FCH47N60F085 , FDMS86255 .
History: SFP036N30BC3 | SSA80R380S | IRFR2607Z | JFPC18N50C
History: SFP036N30BC3 | SSA80R380S | IRFR2607Z | JFPC18N50C



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