FCB20N60_F085 Todos los transistores

 

FCB20N60_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCB20N60_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 341 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 72 nC

Resistencia drenaje-fuente RDS(on): 0.198 Ohm

Empaquetado / Estuche: TO263, D2PAK

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FCB20N60_F085 Datasheet (PDF)

1.1. fcb20n60 f085.pdf Size:363K _fairchild_semi

FCB20N60_F085
FCB20N60_F085

November 2013 FCB20N60_F085 N-Channel MOSFET 600V, 20A, 198mΩ D D Features Typ rDS(on) = 173mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 72nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current packa

2.1. fcb20n60ftm.pdf Size:1144K _upd-mosfet

FCB20N60_F085
FCB20N60_F085

December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description • 650V @ TJ = 150°C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

2.2. fcb20n60tm.pdf Size:956K _upd-mosfet

FCB20N60_F085
FCB20N60_F085

December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.15Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. •

 2.3. fcb20n60f f085.pdf Size:354K _fairchild_semi

FCB20N60_F085
FCB20N60_F085

December 2013 FCB20N60F_F085 N-Channel MOSFET 600V, 20A, 190mΩ D D Features Typ rDS(on) = 171mΩ at VGS = 10V, ID = 20A Typ Qg(tot) = 78nC at VGS = 10V, ID = 20A G UIS Capability RoHS Compliant G Qualified to AEC Q101 S S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For current pack

2.4. fcb20n60.pdf Size:964K _fairchild_semi

FCB20N60_F085
FCB20N60_F085

December 2008 TM SuperFET FCB20N60 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 75nC) lower gate charge performance. Low effective o

 2.5. fcb20n60f.pdf Size:1152K _fairchild_semi

FCB20N60_F085
FCB20N60_F085

December 2008 TM SuperFET FCB20N60F 600V N-CHANNEL FRFET Features Description 650V @ TJ = 150C SuperFETTM is,Fairchild' s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced tech

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