FDPC8016S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDPC8016S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2 nS
Cossⓘ - Capacitancia de salida: 495 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de FDPC8016S MOSFET
FDPC8016S Datasheet (PDF)
fdpc8016s.pdf

October 2013FDPC8016SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS
fdpc8016s.pdf

MOSFET - Dual NChannel,Asymmetric,POWERTRENCH) PowerClip 25 VFDPC8016Swww.onsemi.comGeneral DescriptionELECTRICAL CONNECTIONThis device includes two specialized N-Channel MOSFETs in adual package. The switch node has been internally connected to enableeasy placement and routing of synchronous buck converters. Thecontrol MOSFET (Q1) and synchronous SyncFET (Q2) have b
fdpc8014s.pdf

April 2014FDPC8014SPowerTrench Power Clip25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4
fdpc8012s.pdf

October 2014FDPC8012SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 12 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. Th
Otros transistores... FDMA86551L , FDMC612PZ , FDMS36101LF085 , FDMD82100 , FDPC8014S , FDMC610P , FDMC86261P , FCB20N60F085 , IRF1405 , FCPF400N80Z , FCH47N60F085 , FDMS86255 , FDBL86210F085 , FDMS86263P , FCMT199N60 , FQA13N50CF109 , FQP2P40 .
History: IPB110P06LM | RE1C002ZP | IRF7306PBF | SRT06N022HS | NCEP048NH150T | APT8024JLL
History: IPB110P06LM | RE1C002ZP | IRF7306PBF | SRT06N022HS | NCEP048NH150T | APT8024JLL



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
7408 mosfet | cs630 | 2sc2705 transistor | 647 transistor | d525 transistor | 2sc1583 | g60t60an3h | mosfet k8a50d