FDPC8016S Todos los transistores

 

FDPC8016S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPC8016S
   Código: 05OD_15OD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 25 nC
   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 495 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: PQFN5X6
     - Selección de transistores por parámetros

 

FDPC8016S Datasheet (PDF)

 ..1. Size:362K  fairchild semi
fdpc8016s.pdf pdf_icon

FDPC8016S

October 2013FDPC8016SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS

 ..2. Size:289K  onsemi
fdpc8016s.pdf pdf_icon

FDPC8016S

MOSFET - Dual NChannel,Asymmetric,POWERTRENCH) PowerClip 25 VFDPC8016Swww.onsemi.comGeneral DescriptionELECTRICAL CONNECTIONThis device includes two specialized N-Channel MOSFETs in adual package. The switch node has been internally connected to enableeasy placement and routing of synchronous buck converters. Thecontrol MOSFET (Q1) and synchronous SyncFET (Q2) have b

 7.1. Size:407K  fairchild semi
fdpc8014s.pdf pdf_icon

FDPC8016S

April 2014FDPC8014SPowerTrench Power Clip25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 3.8 m at VGS = 10 V, ID = 20 Aenable easy placement and routing of synchronous buck Max rDS(on) = 4.7 m at VGS = 4

 7.2. Size:556K  fairchild semi
fdpc8012s.pdf pdf_icon

FDPC8016S

October 2014FDPC8012SPowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 7.0 m at VGS = 4.5 V, ID = 12 Aenable easy placement and routing of synchronous buck Q2: N-Channelconverters. Th

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FDFMA2N028Z | MT4435ACTR | 2SK2666 | IRF7379 | 8N80G-TF1-T

 

 
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