FQA13N50C_F109 Todos los transistores

 

FQA13N50C_F109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQA13N50C_F109

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 218 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 13.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.48 Ohm

Empaquetado / Estuche: TO3PN

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FQA13N50C_F109 Datasheet (PDF)

1.1. fqa13n50c.pdf Size:699K _upd-mosfet

FQA13N50C_F109
FQA13N50C_F109

® QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored to • Fa

1.2. fqa13n50cf.pdf Size:776K _fairchild_semi

FQA13N50C_F109
FQA13N50C_F109

July 2007 ® FRFET FQA13N50CF 500V N-Channel MOSFET Features Description • 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge (typical 43nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss (typical 20pF) This advanced technology has been especially tailored to •

 1.3. fqa13n50c f109.pdf Size:862K _fairchild_semi

FQA13N50C_F109
FQA13N50C_F109

December 2013 FQA13N50C_F109 N-Channel QFET® MOSFET 500 V, 13.5 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect • 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology • Low Gate Charge (Typ. 43 nC) has been especia

1.4. fqa13n50c.pdf Size:699K _fairchild_semi

FQA13N50C_F109
FQA13N50C_F109

® QFET FQA13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 13.5A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 43 nC) planar stripe, DMOS technology. • Low Crss ( typical 20pF) This advanced technology has been especially tailored to • Fa

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