FDMS8350L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS8350L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 3430 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00085 Ohm
Paquete / Cubierta: PQFN5X6
Búsqueda de reemplazo de FDMS8350L MOSFET
FDMS8350L Datasheet (PDF)
fdms8350l.pdf

November 2014FDMS8350LN-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 Abeen especially tailored to minimize the on-state resistance and Advanc
fdms8320ldc.pdf

December 2014FDMS8320LDCN-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductors advanced Power Trench process.Advancements in both silicon and Dual CoolTM package Advanced Packa
fdms8320l.pdf

October 2014FDMS8320LN-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa
fdms8333l.pdf

December 2014FDMS8333LN-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mFeatures General Description Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Aringing of DC/DC converters using either synchronous or Advanced P
Otros transistores... FCMT199N60 , FQA13N50CF109 , FQP2P40 , FQP3N50C , FDB20N50F , FDH210N08 , FDMC86139P , FDZ1416NZ , BS170 , FDD9407F085 , FDMC86259P , FDMS5360LF085 , FDMS5362LF085 , FDMD84100 , FCH041N60E , FDMC6686P , FDMS86150A .
History: SWF2N65D | MTB22N04J3 | IPP062NE7N3 | STM4880 | IRFB4510
History: SWF2N65D | MTB22N04J3 | IPP062NE7N3 | STM4880 | IRFB4510



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