FDMS86163P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETwww.onsemi.comMOSFET P-Channel,BVDSS RDS(ON) MAX ID MAXPOWERTRENCH)-100 V 22 mW @ -10 V -50 A-100 V, -50 A, 22 mWTop BottomPin 1SFDMS86163PSSGGeneral DescriptionDDThis P-Channel MOSFET is produced using onsemis advanced DDPower 56POWERTRENCH process that has been especially tailored toPQFN8minimize the on-state resistance and yet main

October 2014FDMS86163PP-Channel PowerTrench MOSFET -100 V, -50 A, 22 mFeatures General Description Max rDS(on) = 22 m at VGS = -10 V, ID = -7.9 AThis P-Channel MOSFET is produced using Fairchild Max rDS(on) = 30 m at VGS = -6 V, ID = -5.9 A Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Very l

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - NChannel,POWERTRENCH)100 V, 60 A, 8 mWFDMS86101General DescriptionThis N-Channel MOSFET is produced using ON Semiconductorswww.onsemi.comadvanced POWERTRENCH process that has been especiallytailored to minimize the on-state resistance and yet maintain superiorswitching performance.SDFeaturesDS Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

November 2013FDMS86150N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

December 2010FDMS86103LN-Channel PowerTrench MOSFET 100 V, 49 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 12 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Advanced

May 2011FDMS86102LZN-Channel Power Trench MOSFET 100 V, 22 A, 25 mFeatures General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process Max rDS(on) = 37 m at VGS = 4.5 V, ID = 5.8 Athat has been special tailored to minimize the on-state HBM ESD protection

January 2011FDMS86105N-Channel PowerTrench MOSFET 100 V, 26 A, 34 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m at VGS = 10 V, ID = 6 ASemiconductors advanced Power Trench process that has Max rDS(on) = 54 m at VGS = 6 V, ID = 4.5 Abeen especially tailored to minimize the on-state resistance and yet maintain s

January 2015FDMS86150ET100N-Channel Shielded Gate PowerTrench MOSFET100 V, 128 A, 4.85 mFeatures Extended TJ rating to 175CGeneral Description Shielded Gate MOSFET TechnologyThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This p

October 2014FDMS86101AN-Channel Shielded Gate PowerTrench MOSFET100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aincorporates Shielded Gate technology. This process has been optimized for the on-stat

December 2014FDMS86150AN-Channel Shielded Gate PowerTrench MOSFET100 V, 80 A, 4.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET TechnologySemiconductors advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 Aincorporates Shielded Gate technology. This process has been optimized for the

February 2013FDMS86152N-Channel PowerTrench MOSFET 100 V, 45 A, 6 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 Abeen especially tailored to minimize the on-state resistance and Advanced P

July 2013FDMS86101DCN-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET100 V, 60 A, 7.5 mFeatures General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN packageincorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

October 2010FDMS86101N-Channel PowerTrench MOSFET 100 V, 60 A, 8 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 Abeen especially tailored to minimize the on-state resistance and Advanced P

July 2010FDMS86104N-Channel PowerTrench MOSFET 100 V, 16 A, 24 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m at VGS = 10 V, ID = 7 ASemiconductors advanced Power Trench process thant has Max rDS(on) = 39 m at VGS = 6 V, ID = 5.5 Abeen especially tailored to minimize the on-state resistance and Advanced Packa

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MOSFET - N-Channel,POWERTRENCH), DUALCOOL) 56 Shielded Gate100 V, 60 A, 7.5 mWFDMS86101DCwww.onsemi.comGeneral DescriptionThis N-Channel MOSFET is produced using FairchildSemiconductors advanced POWERTRENCH process that ELECTRICAL CONNECTIONincorporates Shielded Gate technology. Advancements in both siliconS Dand DUAL COOL package technologies have been combined to

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur