FDD9409F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDD9409F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 42 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 756 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET FDD9409F085

FDD9409F085 Datasheet (PDF)

7.1. Size:491K fairchild semi
fdd9409 f085.pdf

May 2014FDD9409_F085N-Channel PowerTrench MOSFET40 V, 90 A, 3.2 m DFeaturesD Typ RDS(on) = 2.3m at VGS = 10V, ID = 80A G Typ Qg(tot) = 42nC at VGS = 10V, ID = 80AG UIS CapabilityS RoHS CompliantD-PAKTO-252S Qualified to AEC Q101 (TO-252)Applications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Controlwebsit

7.2. Size:458K onsemi
fdd9409l-f085.pdf

FDD9409L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 90 A, 2.6 mFeatures Typical RDS(on) = 2.1 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and

8.1. Size:371K fairchild semi
fdd9407 f085.pdf

August 2013FDD9407_F085N-Channel Power Trench MOSFET40V, 100A, 2.0m DFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80A D Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Ste

8.2. Size:440K onsemi
fdd9407l-f085.pdf

FDD9407L-F085N-Channel Logic Level PowerTrench MOSFET 40 V, 100 A, 1.7 mDFeatures Typical RDS(on) = 1.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 96 nC at VGS = 10V, ID = 80 ADG UIS CapabilityG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252SApplications (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Int

8.3. Size:609K onsemi
fdd9407-f085.pdf

FDD9407-F085N-Channel Power Trench MOSFET40V, 100A, 2.0mDFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80AD Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integra

8.4. Size:208K inchange semiconductor
fdd9407.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD9407FEATURESWith TO-252(DPAK) packagingUIS capabilityHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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