FDD9409F085 Todos los transistores

 

FDD9409F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD9409F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 756 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO252
 

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FDD9409F085 Datasheet (PDF)

 7.1. Size:491K  fairchild semi
 fdd9409 f085.pdf pdf_icon

FDD9409F085

May 2014FDD9409_F085N-Channel PowerTrench MOSFET40 V, 90 A, 3.2 m DFeaturesD Typ RDS(on) = 2.3m at VGS = 10V, ID = 80A G Typ Qg(tot) = 42nC at VGS = 10V, ID = 80AG UIS CapabilityS RoHS CompliantD-PAKTO-252S Qualified to AEC Q101 (TO-252)Applications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Controlwebsit

 7.2. Size:458K  onsemi
 fdd9409l-f085.pdf pdf_icon

FDD9409F085

FDD9409L-F085N-Channel Logic Level PowerTrench MOSFET40 V, 90 A, 2.6 mFeatures Typical RDS(on) = 2.1 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 52 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and

 8.1. Size:371K  fairchild semi
 fdd9407 f085.pdf pdf_icon

FDD9409F085

August 2013FDD9407_F085N-Channel Power Trench MOSFET40V, 100A, 2.0m DFeatures Typ rDS(on) = 1.6m at VGS = 10V, ID = 80A D Typ Qg(tot) = 86nC at VGS = 10V, ID = 80AGG UIS CapabilityS RoHS CompliantD-PAKTO-252 Qualified to AEC Q101S(TO-252)Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Ste

 8.2. Size:440K  onsemi
 fdd9407l-f085.pdf pdf_icon

FDD9409F085

FDD9407L-F085N-Channel Logic Level PowerTrench MOSFET 40 V, 100 A, 1.7 mDFeatures Typical RDS(on) = 1.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 96 nC at VGS = 10V, ID = 80 ADG UIS CapabilityG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252SApplications (TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Int

MOSTRAR MÁS

Otros transistores... FDMS0309AS , FDMS0310AS , FDMS0312AS , FQB27N25TMF085 , FDBL9403F085 , FDBL9406F085 , FDMS86163P , FDBL9401F085 , P55NF06 , FDMA86265P , FDMC86265P , FDMD82100L , FCH041N65F , FCH130N60 , FCH170N60 , FDN86265P , FCH077N65F .

History: IRFBC30LPBF | TK12A60W | 2SK962-01 | CPC3714C | VB5222 | WMP06N80M3 | TPC8103

 

 
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