FDPF44N25TRDTU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDPF44N25TRDTU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 402 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.069 Ohm
Paquete / Cubierta: TO220F
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FDPF44N25TRDTU Datasheet (PDF)
fdpf44n25trdtu.pdf

August 2014FDPF44N25TN-Channel UniFETTM MOSFET250 V, 44 A, 69 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 60 pF)provi
fdpf44n25t.pdf

March 2009 TMUniFETFDP44N25 / FDPF44N25T250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 47 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 60 pF) stripe, DMOS technology. Fast switchingThis advanced technology
fdpf44n25t.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdpf4n60nz.pdf

November 2013FDPF4N60NZN-Channel UniFETTM II MOSFET600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on
Otros transistores... FCH170N60 , FDN86265P , FCH077N65F , FCH190N65F , FDB86363F085 , FCH104N60 , FCP104N60 , FDPF39N20TLDTU , K4145 , FDPF51N25RDTU , FQPF5P20RDTU , FDP86363F085 , FCPF850N80Z , FCP150N65F , FCPF1300N80Z , FDA16N50LDTU , FDPF33N25TRDTU .
History: NCE20ND15Q | WMO60N02T1 | WMJ12N120D1
History: NCE20ND15Q | WMO60N02T1 | WMJ12N120D1



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