FPF1C2P5MF07AM Todos los transistores

 

FPF1C2P5MF07AM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FPF1C2P5MF07AM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 77 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 620 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: F1
 

 Búsqueda de reemplazo de FPF1C2P5MF07AM MOSFET

   - Selección ⓘ de transistores por parámetros

 

FPF1C2P5MF07AM Datasheet (PDF)

 ..1. Size:2528K  fairchild semi
fpf1c2p5mf07am.pdf pdf_icon

FPF1C2P5MF07AM

July. 2014FPF1C2P5MF07AMF1 Module solution for PV-ApplicationGeneral DescriptionFairchild's brand-new DC-AC module is designed for a power stage that needs more compact design. And the Press-fit techn- ology provides simple and reliable mounting. This module is op- timized for the application such as solar inverter where a high efficiency and robust design are needed.Electrica

 6.1. Size:2341K  fairchild semi
fpf1c2p5bf07a.pdf pdf_icon

FPF1C2P5MF07AM

July. 2014FPF1C2P5BF07AF1 Module solution for PV-ApplicationGeneral DescriptionFairchild's brand-new DC-DC module is designed for a power stage that needs more compact design. And the Press-fit techn- ology provides simple and reliable mounting. This module is op- timized for the application such as solar inverter where a high efficiency and robust design are needed.Electrical

Otros transistores... FCPF650N80Z , FCPF260N65FL1 , FCPF380N65FL1 , FCP130N60 , FCPF400N80ZL1 , FCD1300N80Z , FDMA86151L , FPF1C2P5BF07A , IRFP250 , FCP170N60 , FCPF190N65FL1 , FCU4300N80Z , FDD9410F085 , FDBL0065N40 , FDBL0090N40 , FDBL0120N40 , FDBL0630N150 .

History: SIHW73N60E | NTD4960N

 

 
Back to Top

 


 
.