FCPF190N65FL1 Todos los transistores

 

FCPF190N65FL1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCPF190N65FL1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 77 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO220F

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FCPF190N65FL1 datasheet

 ..1. Size:752K  fairchild semi
fcpf190n65fl1.pdf pdf_icon

FCPF190N65FL1

September 2014 FCPF190N65FL1 N-Channel SuperFET II FRFET MOSFET 650 V, 20.6 A, 190 m Features Description 700 V @TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing RDS(on) = 168 m (Typ.) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg =

 ..2. Size:977K  onsemi
fcpf190n65fl1.pdf pdf_icon

FCPF190N65FL1

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:247K  inchange semiconductor
fcpf190n65fl1.pdf pdf_icon

FCPF190N65FL1

isc N-Channel MOSFET Transistor FCPF190N65FL1 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 4.1. Size:283K  onsemi
fcpf190n65s3l1.pdf pdf_icon

FCPF190N65FL1

FCPF190N65S3L1 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 14 A, 190 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailore

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