FDBL0120N40 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDBL0120N40
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 240 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 2160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm
   Paquete / Cubierta: H-PSOF

Búsqueda de reemplazo de MOSFET FDBL0120N40

FDBL0120N40 Datasheet (PDF)

..1. Size:488K fairchild semi
fdbl0120n40.pdf

November 2014FDBL0120N40N-Channel PowerTrench MOSFET40 V, 240 A, 1.2 m Features Typical RDS(on) = 0.9 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 90 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackage

..2. Size:582K onsemi
fdbl0120n40.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.1. Size:446K fairchild semi
fdbl0150n60.pdf

June 2015FDBL0150N60N-Channel PowerTrench MOSFET60 V, 240 A, 1.5 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackaged

8.2. Size:463K fairchild semi
fdbl0150n80.pdf

March 2015FDBL0150N80N-Channel PowerTrench MOSFET80 V, 300 A, 1.4 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionForcurrentpackagedra

8.3. Size:476K fairchild semi
fdbl0110n60.pdf

March 2015FDBL0110N60N-Channel PowerTrench MOSFET60 V, 300 A, 1.2 m Features Typical RDS(on) = 0.85 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 170 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS CompliantApplications Industrial Motor DriveG Industrial Power Supply Industrial Automation Battery Operated toolsS Battery ProtectionFor current package draw

8.4. Size:591K onsemi
fdbl0150n60.pdf