2SK2879-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2879-01
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 150 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 160 nS
Conductancia de drenaje-sustrato (Cd): 330 pF
Resistencia drenaje-fuente RDS(on): 0.33 Ohm
Empaquetado / Estuche: TO-3P
Búsqueda de reemplazo de MOSFET 2SK2879-01
2SK2879-01 Datasheet (PDF)
0.1. 2sk2879-01.pdf 
Size:248K _fuji
N-channel MOS-FET2SK2879-01FAP-IIS Series 500V 0,38 20A 150W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characte
8.1. 2sk2876-01mr.pdf Size:245K _fuji
N-channel MOS-FET2SK2876-01MRFAP-IIS Series 500V 1,5 6A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character
8.2. 2sk2872.pdf Size:236K _fuji
N-channel MOS-FET2SK2872-01MRFAP-IIS Series 450V 1,2 8A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Character
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