HUF76121SK8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF76121SK8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
Paquete / Cubierta: MS012AA
Búsqueda de reemplazo de HUF76121SK8 MOSFET
HUF76121SK8 Datasheet (PDF)
huf76121sk8.pdf

HUF76121SK8Data Sheet April 1999 File Number 47378A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 8A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced- Temperature Compensated PSPICE and SABERprocess technology achieves theElectrical Models
huf76121d3.pdf

HUF76121D3, HUF76121D3SData Sheet December 200120A, 30V, 0.023 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 20A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.023innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelac
huf76121p3-s3s.pdf

HUF76121P3, HUF76121S3SData Sheet September 1999 File Number 4392.847A, 30V, 0.021 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 47A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.021innovative UltraFET process.This advanced process technology Temperature Compensating PS
huf76129p3-s3s.pdf

HUF76129P3, HUF76129S3SData Sheet September 1999 File Number 4395.656A, 30V, 0.016 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 56A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.016innovative UltraFET process.This advanced process technology Temperature Compensating PS
Otros transistores... HUF76107P3 , HUF76113DK8 , HUF76113SK8 , HUF76113T3ST , HUF76121D3 , HUF76121D3S , HUF76121P3 , HUF76121S3S , IRF540N , HUF76129D3 , HUF76129D3S , HUF76129P3 , HUF76129S3S , HUF76131SK8 , HUF76132P3 , HUF76132S3S , HUF76132SK8 .
History: MTN4N65FP | NTTFS4824N | BF908WR | BF511 | IRLS610A
History: MTN4N65FP | NTTFS4824N | BF908WR | BF511 | IRLS610A



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