2SK1487 Todos los transistores

 ..1. Size:61K  toshiba
 2sk1487.pdf

 ..2. Size:203K  inchange semiconductor
 2sk1487.pdf

isc N-Channel MOSFET Transistor 2SK1487 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC moto

 8.1. Size:386K  toshiba
 2sk1489.pdf

2SK1489 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK1489 Chopper Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.8 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 300 A (max) (VDS = 800 V) Enhancement mode Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) Absolu

 8.2. Size:260K  toshiba
 2sk1488.pdf

( DataSheet www.DataSheet4U.com ) www.DataSheet4U.com

 8.3. Size:379K  toshiba
 2sk1486.pdf

2SK1486 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII ) 2SK1486 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 0.08 (typ.) High forward transfer admittance Y = 14 S (typ.) fs Low leakage current I = 300 A (max) (V = 300 V) DSS DS Enhancement-mode Vth = 2.

 8.4. Size:203K  renesas
 2sk1483c.pdf

Preliminary Data Sheet 2SK1483C R07DS1263EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 19, 2015 Description The 2SK1483C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

 8.5. Size:46K  nec
 2sk1485.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1485 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1485, N-channel vertical type MOS FET is a switching device which can be driven directly by the output of ICs having a 5 V power source. 4.5 0.1 As the MOS FET has low on-state resistance and excellent switching 1.6 0.2 1.5 0.1 c

 8.6. Size:48K  nec
 2sk1482.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1482 is N-channel vertical type MOS FET switching device which can be directly driven from an IC operating with a 5 V single power supply. 5.2 MAX. The device featuring low on-state resistance is of the voltage drive type and thus is ideal

 8.7. Size:266K  nec
 2sk1484.pdf

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 2sk1483.pdf

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 2sk1483.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1483 1.70 0.1 Features VDS (V) = 30V ID = 2 A RDS(ON) 800m (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 400m (VGS = 10V) Complments the 2SJ197 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous

 8.10. Size:1107K  cn vbsemi
 2sk1485.pdf

 8.11. Size:203K  inchange semiconductor
 2sk1488.pdf

isc N-Channel MOSFET Transistor 2SK1488 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX