HUF76131SK8 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF76131SK8
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 VRds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: MS012AA
Búsqueda de reemplazo de HUF76131SK8 MOSFET
HUF76131SK8 Datasheet (PDF)
huf76131sk8.pdf

HUF76131SK8Data Sheet January 200310A, 30V, 0.013 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 10A, 30Vmanufactured using the innovative Ultra Low On-Resistance, rDS(ON) = 0.013UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowes
huf76132p3-s3s.pdf

HUF76132P3, HUF76132S3SData Sheet January 200375A, 30V, 0.011 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.011innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Modelachie
huf76132sk8.pdf

HUF76132SK8Data Sheet January 200311.5A, 30V, 0.0115 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFET Logic Level Gate DriveThis N-Channel power MOSFET is 11.5A, 30Vmanufactured using the innovative Simulation ModelsUltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the Electrical Modelsl
huf76139.pdf

HUF76139P3, HUF76139S3SData Sheet September 1999 File Number 4399.575A, 30V, 0.0075 Ohm, N-Channel, Logic FeaturesLevel UltraFET Power MOSFETs Logic Level Gate DriveThese N-Channel power MOSFETs 75A, 30Vare manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075innovative UltraFET process.This advanced process technology Temperature Compensating
Otros transistores... HUF76121D3S , HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , HUF76129D3S , HUF76129P3 , HUF76129S3S , IRF1404 , HUF76132P3 , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , HUF76139P3 , HUF76139S3S , HUF76143P3 .
History: CM1N60S | FDS9412



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMPF8N60BJ | JMPF840BJ | JMPF7N65BJ | JMPF630BJ | JMPF5N50BJ | JMPF4N65BJ | JMPF4N60BJ | JMPF25N50BJ | JMPF20N65BJ | JMPF20N60BJ | JMSL0303TU | JMSL0303TG | JMSL0303AU | JMSL0303AK | JMSL0303AG | JMSL0315AK
Popular searches
2sc2240 transistor | c3198 | 2sc793 | 2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705 | bc239