HUF76132P3 Todos los transistores

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HUF76132P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF76132P3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.011 Ohm

Empaquetado / Estuche: TO220AB

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HUF76132P3 Datasheet (PDF)

1.1. huf76132p3-s3s.pdf Size:223K _fairchild_semi

HUF76132P3
HUF76132P3

HUF76132P3, HUF76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 75A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.011Ω innovative UltraFET™ process. This advanced process technology • Temperature Compensating PSPICE® Model achie

2.1. huf76132sk8.pdf Size:263K _fairchild_semi

HUF76132P3
HUF76132P3

HUF76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET • Logic Level Gate Drive This N-Channel power MOSFET is • 11.5A, 30V manufactured using the innovative • Simulation Models UltraFET™ process. This advanced - Temperature Compensated PSPICE® and SABER³™ process technology achieves the Electrical Models l

3.1. huf76131sk8.pdf Size:256K _fairchild_semi

HUF76132P3
HUF76132P3

HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFET • Logic Level Gate Drive This N-Channel power MOSFET is • 10A, 30V ® manufactured using the innovative • Ultra Low On-Resistance, rDS(ON) = 0.013Ω UltraFET process. This advanced process technology achieves the • Temperature Compensating PSPICE® Model lowes

3.2. huf76139.pdf Size:121K _intersil

HUF76132P3
HUF76132P3

HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs Logic Level Gate Drive These N-Channel power MOSFETs 75A, 30V are manufactured using the Ultra Low On-Resistance, rDS(ON) = 0.0075? innovative UltraFET process. This advanced process technology Temperature Compensating PSPICE Model

3.3. huf76137p3.pdf Size:118K _intersil

HUF76132P3
HUF76132P3

HUF76137P3, HUF76137S3S Data Sheet September 1999 File Number 4398.6 75A, 30V, 0.009 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 75A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.009Ω innovative UltraFET™ process. This advanced process technology • Temperature Compensating PS

Otros transistores... HUF76121P3 , HUF76121S3S , HUF76121SK8 , HUF76129D3 , HUF76129D3S , HUF76129P3 , HUF76129S3S , HUF76131SK8 , IRFZ46N , HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , HUF76139P3 , HUF76139S3S , HUF76143P3 , HUF76143S3S .

 


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