CS8205A Todos los transistores

 ..1. Size:292K  can-sheng
 cs8205a 6a sot-23-6.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com 8205A Dual N-Channel E nhancement Mode Field E ffect Transistor PR ODUC T S UMMAR Y F E ATUR E S S uper high dense cell design for low R DS (ON). VDS S ID R DS (ON) ( m ) Max R ugged and reliable. 27.5 @ VG S = 4.0V 20V 6A S urface Mount Package. 37.5@V G S = 2.5V D1 D2 -

 ..2. Size:387K  can-sheng
 cs8205a sot-23-6.pdf

 8.1. Size:289K  toshiba
 tpcs8205.pdf

TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Unit mm Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current IDSS = 10

 8.2. Size:278K  can-sheng
 cs8205b.pdf

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23-6 Plastic-Encapsulate MOSFETS 8205B MOSFET(N-Channel) FEATURES SOT-23-6 VDS=19.5V,ID=6A RDS(ON)

 9.1. Size:218K  toshiba
 tpcs8204.pdf

TPCS8204 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8204 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance R = 13 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage

 9.2. Size:218K  toshiba
 tpcs8208.pdf

TPCS8208 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8208 Lithium Ion Battery Applications Unit mm Small footprint due to small and thin package Low drain-source ON resistance R = 13 m (typ.) DS (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current IDSS = 10 A (max) (VDS = 20 V) Enhancement-

 9.3. Size:222K  toshiba
 tpcs8209.pdf

TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Unit mm Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance R = 19 m (typ.) DS (ON) High forward transfer admittance Y = 9.2 S (typ.) fs Low leakage cu