2SK1460 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1460
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 35 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.6 Ohm
Encapsulados: TO220FI
Búsqueda de reemplazo de 2SK1460 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK1460 datasheet
..1. Size:117K sanyo
2sk1460.pdf 
Ordering number EN3463A N-Channel Silicon MOSFET 2SK1460 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2078B Micaless package facilitating mounting. [2SK1460] 4.5 10.0 2.8 3.2 0.9 1.2 1.2 0.7 0.75 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220FI (LS) Specification
..2. Size:197K inchange semiconductor
2sk1460.pdf
isc N-Channel MOSFET Transistor 2SK1460 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and sole
0.1. Size:31K sanyo
2sk1460ls.pdf
Ordering number ENN3463B 2SK1460LS N-Channel Silicon MOSFET 2SK1460LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2078C Micaless package facilitating mounting. [2SK1460LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 SANYO TO-
8.1. Size:121K sanyo
2sk1462.pdf
Ordering number EN3465 N-Channel Silicon MOSFET 2SK1462 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2056A Converters. [2SK1462] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum Ratings at
8.2. Size:120K sanyo
2sk1465.pdf
Ordering number EN3468 N-Channel Silicon MOSFET 2SK1465 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2077A Converters. [2SK1465] 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Gate 1 2 3 2 Drain 3 Source 5.45 5.45 SANYO TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25 C Par
8.3. Size:120K sanyo
2sk1463.pdf
Ordering number EN3466 N-Channel Silicon MOSFET 2SK1463 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2076B Converters. [2SK1463] 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Gate 1 2 3 2 Drain 3 Source 5.45 5.45 SANYO TO-3PML Specifications Absolute Maximum Ratings at Ta = 25
8.4. Size:125K sanyo
2sk1466.pdf
Ordering number EN3469 N-Channel Silicon MOSFET 2SK1466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2077A Converters. [2SK1466] 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Gate 1 2 3 2 Drain 3 Source 5.45 5.45 SANYO TO-3PBL Specifications Absolute Maximum Ratings at Ta = 25 C Par
8.5. Size:92K sanyo
2sk1468.pdf
Ordering number EN3769A N-Channel Silicon MOSFET 2SK1468 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1468] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1468] 6.5 2.3 5.0 0.5 4 0.5
8.6. Size:120K sanyo
2sk1464.pdf
Ordering number EN3467 N-Channel Silicon MOSFET 2SK1464 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2076B Converters. [2SK1464] 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 Gate 1 2 3 2 Drain 3 Source SANYO TO-3PML 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 2
8.7. Size:101K sanyo
2sk1467.pdf
Ordering number EN3508A N-Channel Silicon MOSFET 2SK1467 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK1467] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP Specifications Absolute Maximum Ratings at Ta = 25 C Paramet
8.8. Size:119K sanyo
2sk1461.pdf
Ordering number EN3464 N-Channel Silicon MOSFET 2SK1461 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2056A Converters. [2SK1461] 15.6 3.2 4.8 14.0 2.0 1.6 2.0 0.6 1.0 1 2 3 1 Gate 0.6 2 Drain 3 Source 5.45 5.45 SANYO TO-3PB Specifications Absolute Maximum Ratings at
8.9. Size:90K sanyo
2sk1469.pdf
Ordering number EN3770A N-Channel Silicon MOSFET 2SK1469 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK1469] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK1469] 6.5 2.3 5.0 0.5 4 0.5
8.12. Size:203K inchange semiconductor
2sk1462.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1462 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
8.13. Size:201K inchange semiconductor
2sk1465.pdf
isc N-Channel MOSFET Transistor 2SK1465 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno
8.14. Size:204K inchange semiconductor
2sk1463.pdf
isc N-Channel MOSFET Transistor 2SK1463 DESCRIPTION Drain Current I =4.5A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and sole
8.15. Size:200K inchange semiconductor
2sk1466.pdf
isc N-Channel MOSFET Transistor 2SK1466 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =
8.16. Size:203K inchange semiconductor
2sk1464.pdf
isc N-Channel MOSFET Transistor 2SK1464 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno
8.17. Size:203K inchange semiconductor
2sk1461.pdf
isc N-Channel MOSFET Transistor 2SK1461 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and soleno
Otros transistores... VTI630
, VTI630F
, VTI634F
, VTI640
, VTI640F
, SSP2N60B
, SSS2N60B
, 2SK4100LS
, TK10A60D
, 2SK2010
, 2SK1033
, 2SK1035
, 2SK1036
, 2SK1052
, 2SK1053
, 2SK1066
, 2SK1067
.
History: 2SK1444LS
| WMN15N65F2
