2SK1035 Todos los transistores

Power F-MOS FETs 2SK1035 2SK1035 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.2 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 100ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor

Power F-MOS FETs 2SK1033 2SK1033 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf =180ns(typ) No secondary breakdown 3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Mot

Power F-MOS FETs 2SK1036 2SK1036 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on)= 0.23 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 80ns(typ) No secondary breakdown 3.1 0.1 Applications DC-DC converter 1.3 0.2 Non-contact relay 1.4 0.1 Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1039 DESCRIPTION Drain Current ID=8A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1038 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- VDSS=400V(Min) APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 400 V DSS GS V Gate-Source Volta