2SK1103 Todos los transistores

 

2SK1103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1103

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.15 W

Tensión drenaje-fuente (Vds): 65 V

Corriente continua de drenaje (Id): 0.02 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1.5 pF

Resistencia drenaje-fuente RDS(on): 300 Ohm

Empaquetado / Estuche: TO236_SC59

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2SK1103 Datasheet (PDF)

1.1. 2sk1103.pdf Size:29K _panasonic

2SK1103
2SK1103

Silicon Junction FETs (Small Signal) 2SK1103 2SK1103 Silicon N-Channel Junction Unit : mm For switching +0.2 2.8 0.3 Complementary with 2SJ163 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4 0.2 Drain current ID 20

4.1. 2sk1105-r.pdf Size:168K _update

2SK1103
2SK1103



4.2. 2sk1109.pdf Size:44K _nec

2SK1103
2SK1103

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES Compact package 1. Source High forward transfer admittance 2. Drain 3. Gate 1000 S TYP. (IDSS = 100 A) 1 2 1600 S TYP. (IDSS = 200 A) Inclu

 4.3. 2sk1108.pdf Size:85K _nec

2SK1103
2SK1103

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1108 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance 1000 S TYP. (IDSS = 100 A) 1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - S ORDERING INFORMATION PART N

4.4. 2sk1104.pdf Size:28K _panasonic

2SK1103
2SK1103

Silicon Junction FETs (Small Signal) 2SK1104 2SK1104 Silicon N-Channel Junction Unit : mm For switching 4.0 0.2 Complementary with 2SJ164 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 1.27 1.27 1 : Source Gate-Drain voltage VGDS 65 V 2.54 0.15 2 : Gate Drain current ID 20 mA 3 : Drain

 4.5. 2sk1109.pdf Size:10K _utc

2SK1103
2SK1103

UTC K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 2 DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. 3 FEATURES *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast TOP VIEW power on settling time SOT-23 1:SOURCE 2:DRAIN 3:GATE ABSOLUTE MAXIMUM RATINGS ( Operating temper

4.6. 2sk1101-01mr.pdf Size:162K _fuji

2SK1103
2SK1103

www.DataSheet4U.com

4.7. 2sk1102-01mr.pdf Size:169K _fuji

2SK1103
2SK1103



4.8. 2sk1109.pdf Size:977K _kexin

2SK1103
2SK1103

SMD Type MOSFET N-Channel Junction Field Effect Transistors 2SK1109 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 10m A 1 2 ● High forward transfer admittance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1000 μs TYP. (IDSS = 100 μA) 1600 μs TYP. (IDSS = 200 μA) ● Includes diode and high resistance at G - S 1. Drain 2. So

Otros transistores... CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 
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