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Silicon Junction FETs (Small Signal) 2SK1103 2SK1103 Silicon N-Channel Junction Unit mm For switching +0.2 2.8 0.3 Complementary with 2SJ163 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4 0.2 Drain c

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1108 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance 1000 S TYP. (IDSS = 100 A) 1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - S ORDERING INFORM

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES Compact package 1. Source High forward transfer admittance 2. Drain 3. Gate 1000 S TYP. (IDSS = 100 A) 1 2 1600 S TYP. (IDSS = 200

Silicon Junction FETs (Small Signal) 2SK1104 2SK1104 Silicon N-Channel Junction Unit mm For switching 4.0 0.2 Complementary with 2SJ164 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 1.27 1.27 1 Source Gate-Drain voltage VGDS 65 V 2.54 0.15 2 Gate Drain current ID 20 mA 3

UTC K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 2 DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. 3 FEATURES *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast TOP VIEW power on settling time SOT-23 1 SOURCE 2 DRAIN 3 GATE ABSOLUTE MAXIMUM RATINGS ( Operating tem

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SMD Type MOSFET N-Channel Junction Field Effect Transistors 2SK1109 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 10m A 1 2 High forward transfer admittance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1000 s TYP. (IDSS = 100 A) 1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S 1. Drain 2. So

isc N-Channel MOSFET Transistor 2SK1105 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, UPS,DC-DC converters , general purpose power amplifier applications . ABSOLUTE MAXIMUM RATIN